Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam

Chi Hsien Huang; Ching Yuan Su; Takeru Okada; Lain Jong Li; Kuan I. Ho; Pei Wen Li; Inn Hao Chen; Chien Chou; Chao Sung Lai; Seiji Samukawa

doi:10.1016/j.carbon.2013.04.099

Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam

Chi Hsien Huang, Ching Yuan Su, Takeru Okada, Lain Jong Li, Kuan I. Ho, Pei Wen Li, Inn Hao Chen, Chien Chou, Chao Sung Lai^*, Seiji Samukawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

Top-down process, comprising lithography and plasma etching is widely used in very-large-scale integration due to its scalability, has the greatest potential to fabricate graphene nanoribbon based nanoelectronic devices for large-scale intergraded circuits. However, conventional plasma etching inevitably introduces plenty of damage or defects to the etched materials, which drastically degrades the performance of nano materials. In this study, extremely low-damage neutral beam etching (NBE) is applied to fabricate ultra-low-defect graphene nanoribbon array (GNR). The ultra-low-edge-defect GNRs are fabricated by E-beam lithography followed by oxygen NBE from large-scale chemical-vapor-deposition-grown graphene. AFM images clearly shows the GNRs patterned by NBE and E-beam lithography, and Raman spectroscopy exhibits extremely low I_D/I_G of GNRs, which indicate that high-quality GNRs can be successfully fabricated by neutral beam. We also demonstrated bottom-gated field-effect transistor with the high-quality GNR and observed a high carrier mobility (>200 cm²V^-1 s ^-1) at room temperature.

Original language	English (US)
Pages (from-to)	229-235
Number of pages	7
Journal	Carbon
Volume	61
DOIs	https://doi.org/10.1016/j.carbon.2013.04.099
State	Published - Sep 2013
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Materials Science

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10.1016/j.carbon.2013.04.099

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@article{8842bd6ee97342ccb6921069d0ff9f7e,

title = "Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam",

abstract = "Top-down process, comprising lithography and plasma etching is widely used in very-large-scale integration due to its scalability, has the greatest potential to fabricate graphene nanoribbon based nanoelectronic devices for large-scale intergraded circuits. However, conventional plasma etching inevitably introduces plenty of damage or defects to the etched materials, which drastically degrades the performance of nano materials. In this study, extremely low-damage neutral beam etching (NBE) is applied to fabricate ultra-low-defect graphene nanoribbon array (GNR). The ultra-low-edge-defect GNRs are fabricated by E-beam lithography followed by oxygen NBE from large-scale chemical-vapor-deposition-grown graphene. AFM images clearly shows the GNRs patterned by NBE and E-beam lithography, and Raman spectroscopy exhibits extremely low ID/IG of GNRs, which indicate that high-quality GNRs can be successfully fabricated by neutral beam. We also demonstrated bottom-gated field-effect transistor with the high-quality GNR and observed a high carrier mobility (>200 cm2V-1 s -1) at room temperature.",

author = "Huang, {Chi Hsien} and Su, {Ching Yuan} and Takeru Okada and Li, {Lain Jong} and Ho, {Kuan I.} and Li, {Pei Wen} and Chen, {Inn Hao} and Chien Chou and Lai, {Chao Sung} and Seiji Samukawa",

year = "2013",

month = sep,

doi = "10.1016/j.carbon.2013.04.099",

language = "English (US)",

volume = "61",

pages = "229--235",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier",

}

TY - JOUR

T1 - Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam

AU - Huang, Chi Hsien

AU - Su, Ching Yuan

AU - Okada, Takeru

AU - Li, Lain Jong

AU - Ho, Kuan I.

AU - Li, Pei Wen

AU - Chen, Inn Hao

AU - Chou, Chien

AU - Lai, Chao Sung

AU - Samukawa, Seiji

PY - 2013/9

Y1 - 2013/9

N2 - Top-down process, comprising lithography and plasma etching is widely used in very-large-scale integration due to its scalability, has the greatest potential to fabricate graphene nanoribbon based nanoelectronic devices for large-scale intergraded circuits. However, conventional plasma etching inevitably introduces plenty of damage or defects to the etched materials, which drastically degrades the performance of nano materials. In this study, extremely low-damage neutral beam etching (NBE) is applied to fabricate ultra-low-defect graphene nanoribbon array (GNR). The ultra-low-edge-defect GNRs are fabricated by E-beam lithography followed by oxygen NBE from large-scale chemical-vapor-deposition-grown graphene. AFM images clearly shows the GNRs patterned by NBE and E-beam lithography, and Raman spectroscopy exhibits extremely low ID/IG of GNRs, which indicate that high-quality GNRs can be successfully fabricated by neutral beam. We also demonstrated bottom-gated field-effect transistor with the high-quality GNR and observed a high carrier mobility (>200 cm2V-1 s -1) at room temperature.

AB - Top-down process, comprising lithography and plasma etching is widely used in very-large-scale integration due to its scalability, has the greatest potential to fabricate graphene nanoribbon based nanoelectronic devices for large-scale intergraded circuits. However, conventional plasma etching inevitably introduces plenty of damage or defects to the etched materials, which drastically degrades the performance of nano materials. In this study, extremely low-damage neutral beam etching (NBE) is applied to fabricate ultra-low-defect graphene nanoribbon array (GNR). The ultra-low-edge-defect GNRs are fabricated by E-beam lithography followed by oxygen NBE from large-scale chemical-vapor-deposition-grown graphene. AFM images clearly shows the GNRs patterned by NBE and E-beam lithography, and Raman spectroscopy exhibits extremely low ID/IG of GNRs, which indicate that high-quality GNRs can be successfully fabricated by neutral beam. We also demonstrated bottom-gated field-effect transistor with the high-quality GNR and observed a high carrier mobility (>200 cm2V-1 s -1) at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=84879684685&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2013.04.099

DO - 10.1016/j.carbon.2013.04.099

M3 - Article

AN - SCOPUS:84879684685

SN - 0008-6223

VL - 61

SP - 229

EP - 235

JO - Carbon

JF - Carbon

ER -

Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam

Abstract

ASJC Scopus subject areas

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