Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

Seung Sae Hong, Judy J. Cha, Desheng Kong, Yi Cui

Research output: Contribution to journalArticlepeer-review

201 Scopus citations

Abstract

A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.
Original languageEnglish (US)
JournalNature Communications
Volume3
Issue number1
DOIs
StatePublished - Mar 27 2012
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-l1-001-12
Acknowledgements: We thank K. Lai and J. R. Williams for the helpful discussions, and B. Weil for the help in the manuscript preparation. Y. C. acknowledges the supports from the Keck Foundation, DARPA MESO project (No. N66001-11-1-4105) and the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-l1-001-12).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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