Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

Seung Sae Hong; Judy J. Cha; Desheng Kong; Yi Cui

doi:10.1038/ncomms1771

Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

Seung Sae Hong, Judy J. Cha, Desheng Kong, Yi Cui

Research output: Contribution to journal › Article › peer-review

204 Scopus citations

Abstract

A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

Original language	English (US)
Journal	Nature Communications
Volume	3
Issue number	1
DOIs	https://doi.org/10.1038/ncomms1771
State	Published - Mar 27 2012
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-l1-001-12
Acknowledgements: We thank K. Lai and J. R. Williams for the helpful discussions, and B. Weil for the help in the manuscript preparation. Y. C. acknowledges the supports from the Keck Foundation, DARPA MESO project (No. N66001-11-1-4105) and the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-l1-001-12).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1038/ncomms1771

https://repository.kaust.edu.sa/bitstream/10754/597020/1/ncomms1771.pdf

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@article{0c3b343925a143bda09a342df5d40d69,

title = "Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons",

abstract = "A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. {\textcopyright} 2012 Macmillan Publishers Limited. All rights reserved.",

author = "Hong, {Seung Sae} and Cha, {Judy J.} and Desheng Kong and Yi Cui",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-l1-001-12 Acknowledgements: We thank K. Lai and J. R. Williams for the helpful discussions, and B. Weil for the help in the manuscript preparation. Y. C. acknowledges the supports from the Keck Foundation, DARPA MESO project (No. N66001-11-1-4105) and the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-l1-001-12). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2012",

month = mar,

day = "27",

doi = "10.1038/ncomms1771",

language = "English (US)",

volume = "3",

journal = "Nature Communications",

issn = "2041-1723",

publisher = "Nature Research",

number = "1",

}

TY - JOUR

T1 - Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

AU - Hong, Seung Sae

AU - Cha, Judy J.

AU - Kong, Desheng

AU - Cui, Yi

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-l1-001-12 Acknowledgements: We thank K. Lai and J. R. Williams for the helpful discussions, and B. Weil for the help in the manuscript preparation. Y. C. acknowledges the supports from the Keck Foundation, DARPA MESO project (No. N66001-11-1-4105) and the King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-l1-001-12). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2012/3/27

Y1 - 2012/3/27

N2 - A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

AB - A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

UR - http://hdl.handle.net/10754/597020

UR - http://www.nature.com/articles/ncomms1771

UR - http://www.scopus.com/inward/record.url?scp=84859207595&partnerID=8YFLogxK

U2 - 10.1038/ncomms1771

DO - 10.1038/ncomms1771

M3 - Article

C2 - 22453830

SN - 2041-1723

VL - 3

JO - Nature Communications

JF - Nature Communications

IS - 1

ER -

Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

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