Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge

Chaoming Liu; René Hübner; Yufang Xie; Mao Wang; C Xu; Zenan Jiang; Ye Yuan; Xingji Li; Jianqun Yang; Ling-wei Li; Eugen Weschke; Slawomir Prucnal; Manfred Helm; Shengqiang Zhou

doi:10.1088/1361-6528/aaefb1

Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge

Chaoming Liu, René Hübner, Yufang Xie, Mao Wang, C Xu, Zenan Jiang, Ye Yuan, Xingji Li, Jianqun Yang, Ling-wei Li, Eugen Weschke, Slawomir Prucnal, Manfred Helm, Shengqiang Zhou

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In the present work, millisecond-range flash lamp annealing is used to recrystallize Mn-implanted Ge. Through systematic investigations of structural and magnetic properties, we find that the flash lamp annealing produces a phase mixture consisting of spinodally decomposed Mn-rich ferromagnetic clusters within a paramagnetic-like matrix with randomly distributed Mn atoms. Increasing the annealing energy density from 46, via 50, to 56 J/cm2 causes the segregation of Mn atoms into clusters, as proven by transmission electron microscopy analysis and quantitatively confirmed by magnetization measurements. According to X-ray absorption spectroscopy, the dilute Mn ions within Ge are in d5 electronic configuration. This Mn-doped Ge shows paramagnetism, as evidenced by the unsaturated magnetic-field-dependent X-ray magnetic circular dichroism signal. Our study reveals how spinodal decomposition occurs and influences the formation of ferromagnetic Mn-rich Ge-Mn nanoclusters.

Original language	English (US)
Pages (from-to)	054001
Journal	Nanotechnology
Volume	30
Issue number	5
DOIs	https://doi.org/10.1088/1361-6528/aaefb1
State	Published - Nov 30 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Authors acknowledge the ion implantation group at HZDR. This work is supported by National Natural Science Foundation of China (No. 11775061). The funding of TEM Talos by the German Federal Ministry of Education of Research (BMBF), Grant No. 03SF0451, in the framework of HEMCP is gratefully acknowledged. The author C. L. thanks the financial support by Chinese Scholarship Council (File No. 201706125070).

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https://repository.kaust.edu.sa/bitstream/10754/629935/1/Liu%2bet%2bal_2018_Nanotechnology_10.1088_1361-6528_aaefb1.pdf

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@article{318803b93b5e4b0ca0b26d0940d24298,

title = "Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge",

abstract = "In the present work, millisecond-range flash lamp annealing is used to recrystallize Mn-implanted Ge. Through systematic investigations of structural and magnetic properties, we find that the flash lamp annealing produces a phase mixture consisting of spinodally decomposed Mn-rich ferromagnetic clusters within a paramagnetic-like matrix with randomly distributed Mn atoms. Increasing the annealing energy density from 46, via 50, to 56 J/cm2 causes the segregation of Mn atoms into clusters, as proven by transmission electron microscopy analysis and quantitatively confirmed by magnetization measurements. According to X-ray absorption spectroscopy, the dilute Mn ions within Ge are in d5 electronic configuration. This Mn-doped Ge shows paramagnetism, as evidenced by the unsaturated magnetic-field-dependent X-ray magnetic circular dichroism signal. Our study reveals how spinodal decomposition occurs and influences the formation of ferromagnetic Mn-rich Ge-Mn nanoclusters.",

author = "Chaoming Liu and Ren{\'e} H{\"u}bner and Yufang Xie and Mao Wang and C Xu and Zenan Jiang and Ye Yuan and Xingji Li and Jianqun Yang and Ling-wei Li and Eugen Weschke and Slawomir Prucnal and Manfred Helm and Shengqiang Zhou",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Authors acknowledge the ion implantation group at HZDR. This work is supported by National Natural Science Foundation of China (No. 11775061). The funding of TEM Talos by the German Federal Ministry of Education of Research (BMBF), Grant No. 03SF0451, in the framework of HEMCP is gratefully acknowledged. The author C. L. thanks the financial support by Chinese Scholarship Council (File No. 201706125070).",

year = "2018",

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doi = "10.1088/1361-6528/aaefb1",

language = "English (US)",

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pages = "054001",

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T1 - Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge

AU - Liu, Chaoming

AU - Hübner, René

AU - Xie, Yufang

AU - Wang, Mao

AU - Xu, C

AU - Jiang, Zenan

AU - Yuan, Ye

AU - Li, Xingji

AU - Yang, Jianqun

AU - Li, Ling-wei

AU - Weschke, Eugen

AU - Prucnal, Slawomir

AU - Helm, Manfred

AU - Zhou, Shengqiang

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Authors acknowledge the ion implantation group at HZDR. This work is supported by National Natural Science Foundation of China (No. 11775061). The funding of TEM Talos by the German Federal Ministry of Education of Research (BMBF), Grant No. 03SF0451, in the framework of HEMCP is gratefully acknowledged. The author C. L. thanks the financial support by Chinese Scholarship Council (File No. 201706125070).

PY - 2018/11/30

Y1 - 2018/11/30

N2 - In the present work, millisecond-range flash lamp annealing is used to recrystallize Mn-implanted Ge. Through systematic investigations of structural and magnetic properties, we find that the flash lamp annealing produces a phase mixture consisting of spinodally decomposed Mn-rich ferromagnetic clusters within a paramagnetic-like matrix with randomly distributed Mn atoms. Increasing the annealing energy density from 46, via 50, to 56 J/cm2 causes the segregation of Mn atoms into clusters, as proven by transmission electron microscopy analysis and quantitatively confirmed by magnetization measurements. According to X-ray absorption spectroscopy, the dilute Mn ions within Ge are in d5 electronic configuration. This Mn-doped Ge shows paramagnetism, as evidenced by the unsaturated magnetic-field-dependent X-ray magnetic circular dichroism signal. Our study reveals how spinodal decomposition occurs and influences the formation of ferromagnetic Mn-rich Ge-Mn nanoclusters.

AB - In the present work, millisecond-range flash lamp annealing is used to recrystallize Mn-implanted Ge. Through systematic investigations of structural and magnetic properties, we find that the flash lamp annealing produces a phase mixture consisting of spinodally decomposed Mn-rich ferromagnetic clusters within a paramagnetic-like matrix with randomly distributed Mn atoms. Increasing the annealing energy density from 46, via 50, to 56 J/cm2 causes the segregation of Mn atoms into clusters, as proven by transmission electron microscopy analysis and quantitatively confirmed by magnetization measurements. According to X-ray absorption spectroscopy, the dilute Mn ions within Ge are in d5 electronic configuration. This Mn-doped Ge shows paramagnetism, as evidenced by the unsaturated magnetic-field-dependent X-ray magnetic circular dichroism signal. Our study reveals how spinodal decomposition occurs and influences the formation of ferromagnetic Mn-rich Ge-Mn nanoclusters.

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U2 - 10.1088/1361-6528/aaefb1

DO - 10.1088/1361-6528/aaefb1

M3 - Article

SN - 0957-4484

VL - 30

SP - 054001

JO - Nanotechnology

JF - Nanotechnology

IS - 5

ER -

Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge

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