Type-I band alignment at MoS₂/In_0.15Al_0.85N lattice matched heterojunction and realization of MoS₂ quantum well

The valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices. In this report, to study the band alignment parameters at the In_0.15Al_0.85N/MoS₂ lattice matched heterointerface, large area MoS₂ single layers are chemical vapor deposited on molecular beam epitaxial grown In_0.15Al_0.85N films and vice versa. We grew InAlN having an in-plane lattice parameter closely matching with that of MoS₂. We confirm that the grown MoS₂ is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In_0.15Al_0.85N/MoS₂ heterojunction are determined to be 2.08 ± 0.15 and 0.60 ± 0.15 eV, respectively, with type-I band alignment using high-resolution x-ray photoelectron spectroscopy in conjunction with ultraviolet photoelectron spectroscopy. Furthermore, we design a MoS₂ quantum well structure by growing an In_0.15Al_0.85N layer on MoS₂/In_0.15Al_0.85N type-I heterostructure. By reducing the nitrogen plasma power and flow rate for the overgrown In_0.15Al_0.85N layers, we achieve unaltered structural properties and a reasonable preservation of photoluminescence intensity with a peak width of 70 meV for MoS₂ quantum well (QW). The investigation provides a pathway towards realizing large area, air-stable, lattice matched, and eventual high efficiency In_0.15Al_0.85N/MoS₂/In_0.15Al_0.85N QW-based light emitting devices.