Two-dimensional ferroelectricity and antiferroelectricity for next-generation computing paradigms

Fei Xue*, Yinchang Ma, Hua Wang, Linqu Luo, Yang Xu, Thomas D. Anthopoulos, Mario Lanza, Bin Yu*, Xixiang Zhang*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

3 Scopus citations

Abstract

Ferroelectricity (FE) and antiferroelectricity (AFE) are correlated physical phenomena that, in the two-dimensional (2D) limit, exhibit unprecedented rich physics in terms of polarization creation, stabilization, and switching. By modulating the proximity effect of polarization, 2D FE and AFE can unexpectedly demonstrate reversible transformations. Moreover, these fundamental physics can spur innovation in memory devices toward emerging computation paradigms, including neuromorphic computing and sensing. In this perspective, we discuss the emergent physics of 2D FE and AFE and highlight phase transitions with different approaches between them. We also outline advanced device applications for next-generation computing and provide possible future research lines.

Original languageEnglish (US)
Pages (from-to)1999-2014
Number of pages16
JournalMatter
Volume5
Issue number7
DOIs
StatePublished - Jul 6 2022

Bibliographical note

Funding Information:
This research was supported by the ZJU-Hangzhou Global Scientific and Technological Innovation Centre and the King Abdullah University of Science and Technology Office of Sponsored Research (OSR) under award numbers ORS-2019- CRG8-4081 and ORS-2018-CRG7-3717 .

Publisher Copyright:
© 2022 Elsevier Inc.

Keywords

  • 2D antiferroelectricity
  • 2D ferroelectricity
  • neuromorphic computing
  • phase transformation

ASJC Scopus subject areas

  • General Materials Science

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