Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

Arthur Useinov; R. G. Deminov; Niazbeck Kh H Useinov; Lenar R. Tagirov

doi:10.1002/pssb.200945565

Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

Arthur Useinov, R. G. Deminov, Niazbeck Kh H Useinov, Lenar R. Tagirov

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	1797-1801
Number of pages	5
Journal	physica status solidi (b)
Volume	247
Issue number	7
DOIs	https://doi.org/10.1002/pssb.200945565
State	Published - May 3 2010

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was partly supported by the Russian Ministry of Science and Education (including the contract P902), and RFBR, project no. 10-02-91225-CT_a.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.200945565

Cite this

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title = "Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions",

abstract = "We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. {\textcopyright} 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was partly supported by the Russian Ministry of Science and Education (including the contract P902), and RFBR, project no. 10-02-91225-CT_a.",

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AU - Useinov, Arthur

AU - Deminov, R. G.

AU - Useinov, Niazbeck Kh H

AU - Tagirov, Lenar R.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was partly supported by the Russian Ministry of Science and Education (including the contract P902), and RFBR, project no. 10-02-91225-CT_a.

PY - 2010/5/3

Y1 - 2010/5/3

N2 - We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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JO - physica status solidi (b)

JF - physica status solidi (b)

IS - 7

ER -

Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

Abstract

Bibliographical note

ASJC Scopus subject areas

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