Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation

L. Liao; Z. Zhang; Y. Yang; B. Yan; H. T. Cao; L. L. Chen; G. P. Li; T. Wu; Z. X. Shen; B. K. Tay; T. Yu; X. W. Sun

doi:10.1063/1.2981189

Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation

L. Liao, Z. Zhang, Y. Yang, B. Yan, H. T. Cao, L. L. Chen, G. P. Li, T. Wu, Z. X. Shen, B. K. Tay, T. Yu^*, X. W. Sun

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n -type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4× 102 to 3.3× 10-3 cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75× 107 A/ cm2. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.

Original language	English (US)
Article number	076104
Journal	Journal of Applied Physics
Volume	104
Issue number	7
DOIs	https://doi.org/10.1063/1.2981189
State	Published - 2008
Externally published	Yes

Bibliographical note

Funding Information:
Liao Lei acknowledges the support by the Singapore Millennium Foundation 2008 scholarship.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2981189

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title = "Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation",

abstract = "Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n -type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4× 102 to 3.3× 10-3 cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75× 107 A/ cm2. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.",

author = "L. Liao and Z. Zhang and Y. Yang and B. Yan and Cao, {H. T.} and Chen, {L. L.} and Li, {G. P.} and T. Wu and Shen, {Z. X.} and Tay, {B. K.} and T. Yu and Sun, {X. W.}",

note = "Funding Information: Liao Lei acknowledges the support by the Singapore Millennium Foundation 2008 scholarship.",

year = "2008",

doi = "10.1063/1.2981189",

language = "English (US)",

volume = "104",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation

AU - Liao, L.

AU - Zhang, Z.

AU - Yang, Y.

AU - Yan, B.

AU - Cao, H. T.

AU - Chen, L. L.

AU - Li, G. P.

AU - Wu, T.

AU - Shen, Z. X.

AU - Tay, B. K.

AU - Yu, T.

AU - Sun, X. W.

N1 - Funding Information: Liao Lei acknowledges the support by the Singapore Millennium Foundation 2008 scholarship.

PY - 2008

Y1 - 2008

N2 - Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n -type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4× 102 to 3.3× 10-3 cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75× 107 A/ cm2. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.

AB - Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n -type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4× 102 to 3.3× 10-3 cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75× 107 A/ cm2. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.

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U2 - 10.1063/1.2981189

DO - 10.1063/1.2981189

M3 - Article

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VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation

Abstract

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