Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation

L. Liao, Z. Zhang, Y. Yang, B. Yan, H. T. Cao, L. L. Chen, G. P. Li, T. Wu, Z. X. Shen, B. K. Tay, T. Yu*, X. W. Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n -type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4× 102 to 3.3× 10-3 cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75× 107 A/ cm2. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.

Original languageEnglish (US)
Article number076104
JournalJournal of Applied Physics
Issue number7
StatePublished - 2008
Externally publishedYes

Bibliographical note

Funding Information:
Liao Lei acknowledges the support by the Singapore Millennium Foundation 2008 scholarship.

ASJC Scopus subject areas

  • General Physics and Astronomy


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