Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n -type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4× 102 to 3.3× 10-3 cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75× 107 A/ cm2. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.
Bibliographical noteFunding Information:
Liao Lei acknowledges the support by the Singapore Millennium Foundation 2008 scholarship.
ASJC Scopus subject areas
- General Physics and Astronomy