Abstract
We report, to the best of our knowledge, the first employment of a self-injection locking scheme for the demonstration of a tunable InGaN/GaN semiconductor laser diode. We have achieved a 7.11 nm (521.10–528.21 nm) tunability in a green color with different injection currents and temperatures. The system exhibited mode spectral linewidth as narrow as ∼69 pm and a side mode suppression ratio as high as ∼28 dB, with a maximum optical power of ∼16.7 mW. In the entire tuning window, extending beyond 520 nm, a spectral linewidth of ≤100 pm, high power, and stable performance were consistently achieved, making this, to the best of our knowledge, the first-of-its-kind compact tunable laser system attractive for spectroscopy, imaging, sensing systems, and visible light communication.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4931 |
| Journal | Optics Letters |
| Volume | 43 |
| Issue number | 20 |
| DOIs | |
| State | Published - Oct 8 2018 |
Bibliographical note
KAUST Repository Item: Exported on 2021-02-19Acknowledged KAUST grant number(s): KAUST004, BAS/1/1614-01-01, GEN/1/6607-01-01, KCR/1/2081-01-01, REP/1/2878-01-01
Acknowledgements: King Fahd University of Petroleum and Minerals (KFUPM) (KAUST004); King Abdulaziz City for Science and Technology (KACST) (EE2381, KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01, GEN/1/6607-01-01, KCR/1/2081-01-01, REP/1/2878-01-01); KAUST–KFUPM Special Initiative (KKI) Program.