Abstract
We implemented a tunable dual-longitudinal-mode spacing InGaN/GaN green (521–528 nm) laser diode by employing a self-injection locking scheme that is based on an external cavity configuration and utilizing either a high-or partial-reflecting mirror. A tunable longitudinal-mode spacing of 0.20 – 5.96 nm was accomplished, corresponding to a calculated frequency difference of 0.22–6.51 THz, as a result. The influence of operating current and temperature on the system performance was also investigated with a measured maximum side-mode-suppression ratio of 30.4 dB and minimum dual-mode peak optical power ratio of 0.03 dB. To shed light on the operation of the dual-wavelength device arising from the tunable longitudinal-mode spacing mechanism, the underlying physics is qualitatively described. To the best of our knowledge, this tunable longitudinal-mode-spacing dual-wavelength device is novel, and has potential applications as an alternative means in millimeter wave and THz generation, thus possibly addressing the terahertz technology gap. The dual-wavelength operation is also attractive for high-resolution imaging and broadband wireless communication.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 143324-143330 |
| Number of pages | 7 |
| Journal | IEEE Access |
| Volume | 7 |
| DOIs | |
| State | Published - Oct 1 2019 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): BAS/1/1614-01-01, GEN/1/6607-01-01, KCR/1/2081-01-01, REP/1/2878-01-01
Acknowledgements: Authors acknowledge the support from King Fahd University of Petroleum & Minerals (KFUPM); King Abdulaziz City for Science
and Technology (KACST), (grant nos. EE2381 and KACST TIC R2-FP-008); Partial support from King Abdullah University of
Science and Technology (KAUST) baseline funding (grant nos. BAS/1/1614-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01);
and KAUST-KFUPM Special Initiative (KKI) Program (REP/1/2878-01-01).