Tristate Resistive Switching in Heterogenous Van der Waals Dielectric Structures

Kaichen Zhu; Xianhu Liang; Bin Yuan; Marco A. Villena; Chao Wen; Tao Wang; Shaochuan Chen; Mario Lanza; Fei Hui; Yuanyuan Shi

doi:10.1109/IRPS.2019.8720485

Tristate Resistive Switching in Heterogenous Van der Waals Dielectric Structures

Kaichen Zhu, Xianhu Liang, Bin Yuan, Marco A. Villena, Chao Wen, Tao Wang, Shaochuan Chen, Mario Lanza, Fei Hui, Yuanyuan Shi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Two dimensional (2D) materials have been used in memristors to improve and stabilize resistive switching (RS) behavior; however, most reports used large device area (\geq 10^ 4 \mu \text m^ 2), in which currents in each resistive state may be driven by largely defective regions that are not applicable in smaller devices. Here we present the first fabrication of cross-point memristors with sizes of 5 \mu \text m \times 5 \mu \text m using multilayer heterogeneous van der Waals structure. We have constructed graphene/hexagonal boron nitride/graphene (G/h-BN/G) devices using Ti and Au electrodes. The devices can show two-state or tristate operation depending on the current limitation (CL) used. Similar memristors with larger size of 100 \mu \text m \times 100 \mu \text m do not show this behavior, indicating that miniaturization of 2D materials based memristors is key to achieve this performance.

Original language	English (US)
Title of host publication	IEEE International Reliability Physics Symposium Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781538695043
DOIs	https://doi.org/10.1109/IRPS.2019.8720485
State	Published - May 22 2019
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2021-03-16

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10.1109/IRPS.2019.8720485

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@inproceedings{0c2b68e6dde14ecd82a99f76d4f8a23e,

title = "Tristate Resistive Switching in Heterogenous Van der Waals Dielectric Structures",

abstract = "Two dimensional (2D) materials have been used in memristors to improve and stabilize resistive switching (RS) behavior; however, most reports used large device area (\geq 10^ 4 \mu \text m^ 2), in which currents in each resistive state may be driven by largely defective regions that are not applicable in smaller devices. Here we present the first fabrication of cross-point memristors with sizes of 5 \mu \text m \times 5 \mu \text m using multilayer heterogeneous van der Waals structure. We have constructed graphene/hexagonal boron nitride/graphene (G/h-BN/G) devices using Ti and Au electrodes. The devices can show two-state or tristate operation depending on the current limitation (CL) used. Similar memristors with larger size of 100 \mu \text m \times 100 \mu \text m do not show this behavior, indicating that miniaturization of 2D materials based memristors is key to achieve this performance.",

author = "Kaichen Zhu and Xianhu Liang and Bin Yuan and Villena, {Marco A.} and Chao Wen and Tao Wang and Shaochuan Chen and Mario Lanza and Fei Hui and Yuanyuan Shi",

note = "Generated from Scopus record by KAUST IRTS on 2021-03-16",

year = "2019",

month = may,

day = "22",

doi = "10.1109/IRPS.2019.8720485",

language = "English (US)",

isbn = "9781538695043",

booktitle = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

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T1 - Tristate Resistive Switching in Heterogenous Van der Waals Dielectric Structures

AU - Zhu, Kaichen

AU - Liang, Xianhu

AU - Yuan, Bin

AU - Villena, Marco A.

AU - Wen, Chao

AU - Wang, Tao

AU - Chen, Shaochuan

AU - Lanza, Mario

AU - Hui, Fei

AU - Shi, Yuanyuan

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2019/5/22

Y1 - 2019/5/22

N2 - Two dimensional (2D) materials have been used in memristors to improve and stabilize resistive switching (RS) behavior; however, most reports used large device area (\geq 10^ 4 \mu \text m^ 2), in which currents in each resistive state may be driven by largely defective regions that are not applicable in smaller devices. Here we present the first fabrication of cross-point memristors with sizes of 5 \mu \text m \times 5 \mu \text m using multilayer heterogeneous van der Waals structure. We have constructed graphene/hexagonal boron nitride/graphene (G/h-BN/G) devices using Ti and Au electrodes. The devices can show two-state or tristate operation depending on the current limitation (CL) used. Similar memristors with larger size of 100 \mu \text m \times 100 \mu \text m do not show this behavior, indicating that miniaturization of 2D materials based memristors is key to achieve this performance.

AB - Two dimensional (2D) materials have been used in memristors to improve and stabilize resistive switching (RS) behavior; however, most reports used large device area (\geq 10^ 4 \mu \text m^ 2), in which currents in each resistive state may be driven by largely defective regions that are not applicable in smaller devices. Here we present the first fabrication of cross-point memristors with sizes of 5 \mu \text m \times 5 \mu \text m using multilayer heterogeneous van der Waals structure. We have constructed graphene/hexagonal boron nitride/graphene (G/h-BN/G) devices using Ti and Au electrodes. The devices can show two-state or tristate operation depending on the current limitation (CL) used. Similar memristors with larger size of 100 \mu \text m \times 100 \mu \text m do not show this behavior, indicating that miniaturization of 2D materials based memristors is key to achieve this performance.

UR - https://ieeexplore.ieee.org/document/8720485/

UR - http://www.scopus.com/inward/record.url?scp=85066747429&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2019.8720485

DO - 10.1109/IRPS.2019.8720485

M3 - Conference contribution

SN - 9781538695043

BT - IEEE International Reliability Physics Symposium Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Tristate Resistive Switching in Heterogenous Van der Waals Dielectric Structures

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