Tristate Resistive Switching in Heterogenous Van der Waals Dielectric Structures

Kaichen Zhu, Xianhu Liang, Bin Yuan, Marco A. Villena, Chao Wen, Tao Wang, Shaochuan Chen, Mario Lanza, Fei Hui, Yuanyuan Shi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Two dimensional (2D) materials have been used in memristors to improve and stabilize resistive switching (RS) behavior; however, most reports used large device area (\geq 10^ 4 \mu \text m^ 2), in which currents in each resistive state may be driven by largely defective regions that are not applicable in smaller devices. Here we present the first fabrication of cross-point memristors with sizes of 5 \mu \text m \times 5 \mu \text m using multilayer heterogeneous van der Waals structure. We have constructed graphene/hexagonal boron nitride/graphene (G/h-BN/G) devices using Ti and Au electrodes. The devices can show two-state or tristate operation depending on the current limitation (CL) used. Similar memristors with larger size of 100 \mu \text m \times 100 \mu \text m do not show this behavior, indicating that miniaturization of 2D materials based memristors is key to achieve this performance.
Original languageEnglish (US)
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538695043
StatePublished - May 22 2019
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16


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