Triple reduction of threshold current for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si

Chen Shang, Yating Wan, Justin Norman, Daehwan Jung, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Triple reduction of threshold current was achieved for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by reducing the threading dislocation density, from 7 × 107 to 3 × 106−2.
Original languageEnglish (US)
Title of host publicationOptics InfoBase Conference Papers
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580576
DOIs
StatePublished - Jan 1 2019
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

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