Abstract
Triple reduction of threshold current was achieved for 1.3 mu mathrm{m} InAs quantum dot lasers on patterned, on-axis (001)Si. This was enabled by reducing the threading dislocation density, from 7times 10{7} text{to} 3times 10{6}cm{-2}.
Original language | English (US) |
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Title of host publication | 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Print) | 9781943580576 |
DOIs | |
State | Published - May 1 2019 |
Externally published | Yes |