Trilayered MoS2 metal -Semiconductor-metal photodetectors: Photogain and radiation resistance

Dung Sheng Tsai, Der Hsien Lien, Meng Lin Tsai, Sheng Han Su, Kuan Ming Chen, Jr Jian Ke, Yueh Chung Yu, Lain Jong Li, Jr Hau He

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


Trilayered MoS2 metal-semiconductor-metal (MSM) photodetectors (PDs) exhibit the photogain is up to 24 with high responsivity (∼1.04 A/W). This is because photocarriers generated at the MoS2 between two Au electrodes drift toward the metal-semiconductor interfaces due to band bending under applied bias and are then trapped at the surface state sites at the Au/MoS2 interfaces, giving rise to the decrease in Schottky barrier height. Moreover, MoS2 MSM PDs show fast operation speed; as the contact spacing reduces from 8 to 4 μm, the rise time and fall time of PDs reduce from 70 to 40 μs and from 110 to 50 μs, respectively. Trilayered MoS2 MSM PDs can operate even after 2-MeV proton illumination with ∼1011 cm-2 fluences, indicating the high radiation tolerance. This work demonstrates that trilayer MoS2 opens up a new dimension for 2-D nanomaterial applications in harsh electronics.

Original languageEnglish (US)
Article number6553644
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number1
StatePublished - 2014


  • Graphene
  • MoS
  • Radiation resistance
  • harsh environment
  • photodetector

ASJC Scopus subject areas

  • Ceramics and Composites
  • Atomic and Molecular Physics, and Optics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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