Trilayered MoS2 metal -Semiconductor-metal photodetectors: Photogain and radiation resistance

Dung Sheng Tsai; Der Hsien Lien; Meng Lin Tsai; Sheng Han Su; Kuan Ming Chen; Jr Jian Ke; Yueh Chung Yu; Lain Jong Li; Jr Hau He

doi:10.1109/JSTQE.2013.2268383

Trilayered MoS₂ metal -Semiconductor-metal photodetectors: Photogain and radiation resistance

Dung Sheng Tsai, Der Hsien Lien, Meng Lin Tsai, Sheng Han Su, Kuan Ming Chen, Jr Jian Ke, Yueh Chung Yu, Lain Jong Li, Jr Hau He

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Trilayered MoS₂ metal-semiconductor-metal (MSM) photodetectors (PDs) exhibit the photogain is up to 24 with high responsivity (∼1.04 A/W). This is because photocarriers generated at the MoS2 between two Au electrodes drift toward the metal-semiconductor interfaces due to band bending under applied bias and are then trapped at the surface state sites at the Au/MoS2 interfaces, giving rise to the decrease in Schottky barrier height. Moreover, MoS₂ MSM PDs show fast operation speed; as the contact spacing reduces from 8 to 4 μm, the rise time and fall time of PDs reduce from 70 to 40 μs and from 110 to 50 μs, respectively. Trilayered MoS₂ MSM PDs can operate even after 2-MeV proton illumination with ∼10¹¹ cm^-2 fluences, indicating the high radiation tolerance. This work demonstrates that trilayer MoS₂ opens up a new dimension for 2-D nanomaterial applications in harsh electronics.

Original language	English (US)
Article number	6553644
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	20
Issue number	1
DOIs	https://doi.org/10.1109/JSTQE.2013.2268383
State	Published - 2014

Keywords

Graphene
MoS
Radiation resistance
harsh environment
photodetector

ASJC Scopus subject areas

Ceramics and Composites
Atomic and Molecular Physics, and Optics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1109/JSTQE.2013.2268383

Cite this

@article{5b51f6f2bf1a4ac5aac9de6a943844fa,

title = "Trilayered MoS2 metal -Semiconductor-metal photodetectors: Photogain and radiation resistance",

abstract = "Trilayered MoS2 metal-semiconductor-metal (MSM) photodetectors (PDs) exhibit the photogain is up to 24 with high responsivity (∼1.04 A/W). This is because photocarriers generated at the MoS2 between two Au electrodes drift toward the metal-semiconductor interfaces due to band bending under applied bias and are then trapped at the surface state sites at the Au/MoS2 interfaces, giving rise to the decrease in Schottky barrier height. Moreover, MoS2 MSM PDs show fast operation speed; as the contact spacing reduces from 8 to 4 μm, the rise time and fall time of PDs reduce from 70 to 40 μs and from 110 to 50 μs, respectively. Trilayered MoS2 MSM PDs can operate even after 2-MeV proton illumination with ∼1011 cm-2 fluences, indicating the high radiation tolerance. This work demonstrates that trilayer MoS2 opens up a new dimension for 2-D nanomaterial applications in harsh electronics.",

keywords = "Graphene, MoS, Radiation resistance, harsh environment, photodetector",

author = "Tsai, {Dung Sheng} and Lien, {Der Hsien} and Tsai, {Meng Lin} and Su, {Sheng Han} and Chen, {Kuan Ming} and Ke, {Jr Jian} and Yu, {Yueh Chung} and Li, {Lain Jong} and He, {Jr Hau}",

year = "2014",

doi = "10.1109/JSTQE.2013.2268383",

language = "English (US)",

volume = "20",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

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T1 - Trilayered MoS2 metal -Semiconductor-metal photodetectors

T2 - Photogain and radiation resistance

AU - Tsai, Dung Sheng

AU - Lien, Der Hsien

AU - Tsai, Meng Lin

AU - Su, Sheng Han

AU - Chen, Kuan Ming

AU - Ke, Jr Jian

AU - Yu, Yueh Chung

AU - Li, Lain Jong

AU - He, Jr Hau

PY - 2014

Y1 - 2014

N2 - Trilayered MoS2 metal-semiconductor-metal (MSM) photodetectors (PDs) exhibit the photogain is up to 24 with high responsivity (∼1.04 A/W). This is because photocarriers generated at the MoS2 between two Au electrodes drift toward the metal-semiconductor interfaces due to band bending under applied bias and are then trapped at the surface state sites at the Au/MoS2 interfaces, giving rise to the decrease in Schottky barrier height. Moreover, MoS2 MSM PDs show fast operation speed; as the contact spacing reduces from 8 to 4 μm, the rise time and fall time of PDs reduce from 70 to 40 μs and from 110 to 50 μs, respectively. Trilayered MoS2 MSM PDs can operate even after 2-MeV proton illumination with ∼1011 cm-2 fluences, indicating the high radiation tolerance. This work demonstrates that trilayer MoS2 opens up a new dimension for 2-D nanomaterial applications in harsh electronics.

AB - Trilayered MoS2 metal-semiconductor-metal (MSM) photodetectors (PDs) exhibit the photogain is up to 24 with high responsivity (∼1.04 A/W). This is because photocarriers generated at the MoS2 between two Au electrodes drift toward the metal-semiconductor interfaces due to band bending under applied bias and are then trapped at the surface state sites at the Au/MoS2 interfaces, giving rise to the decrease in Schottky barrier height. Moreover, MoS2 MSM PDs show fast operation speed; as the contact spacing reduces from 8 to 4 μm, the rise time and fall time of PDs reduce from 70 to 40 μs and from 110 to 50 μs, respectively. Trilayered MoS2 MSM PDs can operate even after 2-MeV proton illumination with ∼1011 cm-2 fluences, indicating the high radiation tolerance. This work demonstrates that trilayer MoS2 opens up a new dimension for 2-D nanomaterial applications in harsh electronics.

KW - Graphene

KW - MoS

KW - Radiation resistance

KW - harsh environment

KW - photodetector

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