Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Ghidini, A. Sebastiani

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this work, Conductive Atomic Force Microscope (CAFM) experiments have been combined with device level measurements to evaluate the impact of an electrical stress applied on MOS structures with a 9.8 nm thick SiO2 layer for memory devices. Charge trapping in the generated defects and leakage current measured at the nanoscale have been correlated to the measurements obtained on fully processed MOS structures. Crown Copyright © 2009.
Original languageEnglish (US)
Pages (from-to)1188-1191
Number of pages4
JournalMicroelectronics Reliability
Volume49
Issue number9-11
DOIs
StatePublished - Sep 1 2009
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale'. Together they form a unique fingerprint.

Cite this