Abstract
We report time-of-flight, transient dark injection (DI) and current density versus voltage measurements on polyfluorene copolymer diode structures using pretreated indium tin oxide (ITO) as a hole injecting contact. For ITO exposed to an oxygen plasma, coated in poly(ethylenedioxythiophene)/polystyrenesulphonic acid, or with both treatments, all measurements were entirely consistent with positive carrier, trap-free, space-charge-limited current theory. For untreated ITO, the behaviour is instead injection limited.
Original language | English (US) |
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Journal | Synthetic Metals |
Volume | 122 |
Issue number | 1 |
DOIs | |
State | Published - May 1 2001 |
Externally published | Yes |