The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.
|Original language||English (US)|
|Title of host publication||Nanoscale Photonic and Cell Technologies for Photovoltaics II|
|Publisher||SPIE-Intl Soc Optical Eng|
|State||Published - Aug 18 2009|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This research was supported by the King Abdullah University of Science and Technology (KAUST): Global Research Partnership (GRP) through the Center for Advanced Molecular Photovoltaics (CAMP), the Global Climate and Energy Project (GCEP) through Stanford University and the Department of Energy (Solar America Initiative).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.