We employ a four-band continuum model to study the transport and confinement in an n-p-n junction in bilayer chiral borophene for both the identical- and opposite-chirality configurations. We demonstrate the existence of topological states in a domain wall between domains of opposite-chirality bilayer chiral borophene with reversed layer stacking. An interlayer bias modifies the conductance of the identical-chirality configuration but not that of the opposite-chirality configuration, and it induces a layer localization of the bound and topological states. Our findings suggest paths toward utilization of the layer degree of freedom in bilayer chiral borophene in future electronic devices.
Bibliographical noteKAUST Repository Item: Exported on 2023-05-09
Acknowledgements: King Abdullah University of Science and Technology (KAUST)
ASJC Scopus subject areas
- Condensed Matter Physics
- Mechanics of Materials
- Materials Science(all)
- Mechanical Engineering