Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

Mrinal Kanti Hota, Fwzah H. Alshammari, Khaled N. Salama, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.
Original languageEnglish (US)
Pages (from-to)21856-21863
Number of pages8
JournalACS Applied Materials & Interfaces
Issue number26
StatePublished - Jun 22 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).


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