Abstract
Hole and electron collectors in silicon heterojunction solar cells consist of hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Charge carrier extraction from these layers is achieved by electrodes consisting of a transparent conductive oxide and a metal layer. Earlier, the mere presence of the transparent conductive oxide layer on top of the hole collecting stack was shown to alter minority carrier lifetimes, at low minority injection levels, of the crystalline silicon absorber. In this work, we present a detailed investigation of the magnitude and nature of these effects and discuss their impact on silicon heterojunction solar cell performance for the different device architectures.
Original language | English (US) |
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Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781479979448 |
DOIs | |
State | Published - Dec 14 2015 |
Externally published | Yes |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015 |
Publication series
Name | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
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Other
Other | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
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Country/Territory | United States |
City | New Orleans |
Period | 06/14/15 → 06/19/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
Keywords
- amorphous silicon
- charge carrier lifetime
- crystalline silicon
- heterojunctions
- photovoltaic cells
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials