Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

Andrea Tomasi*, Florent Sahli, Johannes Peter Seif, Lorenzo Fanni, Silvia Martin De Nicolas Agut, Jonas Geissbuhler, Bertrand Paviet-Salomon, Sylvain Nicolay, Loris Barraud, Bjoern Niesen, Stefaan De Wolf, Christophe Ballif

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. Based on our findings, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

Original languageEnglish (US)
Article number7307085
Pages (from-to)17-27
Number of pages11
JournalIEEE Journal of Photovoltaics
Issue number1
StatePublished - Jan 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.


  • Amorphous silicon
  • charge carrier lifetime
  • crystalline silicon
  • heterojunctions
  • passivating contacts
  • photovoltaic cells
  • solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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