Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs

B. S. Ooi; A. C. Bryce; J. H. Marsh; J. Martin

doi:10.1063/1.113083

Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs

B. S. Ooi^*, A. C. Bryce, J. H. Marsh, J. Martin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The residual damage in fluorine and boron ion implanted GaAs/AlGaAs has been studied using transmission electron microscopy both before and after rapid thermal processing. The results showed no extended defects in as-implanted materials. A dense network of interstitial dislocation loops has been observed in boron implanted samples after annealing. Most of these dislocation defects were located in GaAs layers rather than in AlGaAs layers. Only a small number of dislocation loops were found in the fluorine implanted and annealed material. Compared to boron, fluorine is a better candidate for neutral impurity induced disordering applications.

Original language	English (US)
Pages (from-to)	85-87
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	1
DOIs	https://doi.org/10.1063/1.113083
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs",

abstract = "The residual damage in fluorine and boron ion implanted GaAs/AlGaAs has been studied using transmission electron microscopy both before and after rapid thermal processing. The results showed no extended defects in as-implanted materials. A dense network of interstitial dislocation loops has been observed in boron implanted samples after annealing. Most of these dislocation defects were located in GaAs layers rather than in AlGaAs layers. Only a small number of dislocation loops were found in the fluorine implanted and annealed material. Compared to boron, fluorine is a better candidate for neutral impurity induced disordering applications.",

author = "Ooi, {B. S.} and Bryce, {A. C.} and Marsh, {J. H.} and J. Martin",

year = "1994",

doi = "10.1063/1.113083",

language = "English (US)",

volume = "65",

pages = "85--87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "1",

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T1 - Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs

AU - Ooi, B. S.

AU - Bryce, A. C.

AU - Marsh, J. H.

AU - Martin, J.

PY - 1994

Y1 - 1994

N2 - The residual damage in fluorine and boron ion implanted GaAs/AlGaAs has been studied using transmission electron microscopy both before and after rapid thermal processing. The results showed no extended defects in as-implanted materials. A dense network of interstitial dislocation loops has been observed in boron implanted samples after annealing. Most of these dislocation defects were located in GaAs layers rather than in AlGaAs layers. Only a small number of dislocation loops were found in the fluorine implanted and annealed material. Compared to boron, fluorine is a better candidate for neutral impurity induced disordering applications.

AB - The residual damage in fluorine and boron ion implanted GaAs/AlGaAs has been studied using transmission electron microscopy both before and after rapid thermal processing. The results showed no extended defects in as-implanted materials. A dense network of interstitial dislocation loops has been observed in boron implanted samples after annealing. Most of these dislocation defects were located in GaAs layers rather than in AlGaAs layers. Only a small number of dislocation loops were found in the fluorine implanted and annealed material. Compared to boron, fluorine is a better candidate for neutral impurity induced disordering applications.

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U2 - 10.1063/1.113083

DO - 10.1063/1.113083

M3 - Article

AN - SCOPUS:0039988745

SN - 0003-6951

VL - 65

SP - 85

EP - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs

Abstract

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