Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

We propose an effective route to high performance MoSSe electronic devices.
Original languageEnglish (US)
Pages (from-to)11448-11454
Number of pages7
JournalNanoscale
Volume12
Issue number21
DOIs
StatePublished - May 26 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).

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