Charge trapping will have a strong effect on the performance of organic light emitting diodes. Here different models for such trapping in disordered organic semiconductors are presented. The benefits of different transient experimental techniques are explored. Results are presented for electroluminescent polymer diodes which are fully depleted or contain a depletion region type Schottky barrier. The transient behaviour can be explained by a single energy trap site emptying to a Gaussian distribution of transport sites.
|Original language||English (US)|
|Title of host publication||Proceedings of SPIE - The International Society for Optical Engineering|
|Publisher||Society of Photo-Optical Instrumentation Engineers Bellingham, WA, United States|
|State||Published - Dec 1 1999|