We present results from a study addressing the unbiased water-splitting process and its side reactions on GaN-based photoelectrodes decorated with NiOx, FeOx, and CoOx nanoparticles. Observations involving physicochemical analyses of liquid and vapour phases after the experiments were performed in 1 M NaOH under ambient conditions. A water-splitting process with GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide. Quantification of the water-splitting chemical mechanism gave numerical values indicating an increase in the device performance and restriction of the GaN electrocorrosion with surface modifications of GaN structures. Hydrogen generation efficiencies are ηH2(bare GaN) = 1.23%, ηH2(NiOx/GaN) =4.31% , ηH2(FeOx/GaN) = 2.69%, ηH2(CoOx/GaN) = 2.31%. Photoelectrode etching reaction moieties Qetch/Q are 11.5%. 0.21%, 0.26% and 0.20% for bare n-GaN, NiOx/GaN, FeOx/GaN, and CoOx/GaN respectively.
Bibliographical noteKAUST Repository Item: Exported on 2023-08-07
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01). We would like to show our gratitude to the staff of the KAUST Analytical Core Lab, in particular Andrei Zybinskii, for their help with the ICP-MS calibration and measurements.
ASJC Scopus subject areas
- Materials Chemistry
- Surfaces, Coatings and Films
- Metals and Alloys
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials