Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes

Artem Shushanian; Daisuke Iida; Yu Han; Kazuhiro Ohkawa

doi:10.1039/d3cc03387b

Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes

Artem Shushanian, Daisuke Iida, Yu Han, Kazuhiro Ohkawa

Research output: Contribution to journal › Article › peer-review

Abstract

We present results from a study addressing the unbiased water-splitting process and its side reactions on GaN-based photoelectrodes decorated with NiOx, FeOx, and CoOx nanoparticles. Observations involving physicochemical analyses of liquid and vapour phases after the experiments were performed in 1 M NaOH under ambient conditions. A water-splitting process with GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide. Quantification of the water-splitting chemical mechanism gave numerical values indicating an increase in the device performance and restriction of the GaN electrocorrosion with surface modifications of GaN structures. Hydrogen generation efficiencies are ηH2(bare GaN) = 1.23%, ηH2(NiOx/GaN) =4.31% , ηH2(FeOx/GaN) = 2.69%, ηH2(CoOx/GaN) = 2.31%. Photoelectrode etching reaction moieties Qetch/Q are 11.5%. 0.21%, 0.26% and 0.20% for bare n-GaN, NiOx/GaN, FeOx/GaN, and CoOx/GaN respectively.

Original language	English (US)
Journal	CHEMICAL COMMUNICATIONS
DOIs	https://doi.org/10.1039/d3cc03387b
State	Published - Aug 2 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-08-07
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01). We would like to show our gratitude to the staff of the KAUST Analytical Core Lab, in particular Andrei Zybinskii, for their help with the ICP-MS calibration and measurements.

ASJC Scopus subject areas

Materials Chemistry
Surfaces, Coatings and Films
Metals and Alloys
Ceramics and Composites
General Chemistry
Catalysis
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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https://repository.kaust.edu.sa/bitstream/10754/693466/1/d3cc03387b_removed.pdf

Cite this

@article{ec2861285eac4d319ab50c65ca99bfe9,

title = "Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes",

abstract = "We present results from a study addressing the unbiased water-splitting process and its side reactions on GaN-based photoelectrodes decorated with NiOx, FeOx, and CoOx nanoparticles. Observations involving physicochemical analyses of liquid and vapour phases after the experiments were performed in 1 M NaOH under ambient conditions. A water-splitting process with GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide. Quantification of the water-splitting chemical mechanism gave numerical values indicating an increase in the device performance and restriction of the GaN electrocorrosion with surface modifications of GaN structures. Hydrogen generation efficiencies are ηH2(bare GaN) = 1.23%, ηH2(NiOx/GaN) =4.31% , ηH2(FeOx/GaN) = 2.69%, ηH2(CoOx/GaN) = 2.31%. Photoelectrode etching reaction moieties Qetch/Q are 11.5%. 0.21%, 0.26% and 0.20% for bare n-GaN, NiOx/GaN, FeOx/GaN, and CoOx/GaN respectively.",

author = "Artem Shushanian and Daisuke Iida and Yu Han and Kazuhiro Ohkawa",

note = "KAUST Repository Item: Exported on 2023-08-07 Acknowledged KAUST grant number(s): BAS/1/1676-01-01 Acknowledgements: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01). We would like to show our gratitude to the staff of the KAUST Analytical Core Lab, in particular Andrei Zybinskii, for their help with the ICP-MS calibration and measurements.",

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month = aug,

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doi = "10.1039/d3cc03387b",

language = "English (US)",

journal = "CHEMICAL COMMUNICATIONS",

issn = "1359-7345",

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T1 - Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes

AU - Shushanian, Artem

AU - Iida, Daisuke

AU - Han, Yu

AU - Ohkawa, Kazuhiro

N1 - KAUST Repository Item: Exported on 2023-08-07 Acknowledged KAUST grant number(s): BAS/1/1676-01-01 Acknowledgements: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01). We would like to show our gratitude to the staff of the KAUST Analytical Core Lab, in particular Andrei Zybinskii, for their help with the ICP-MS calibration and measurements.

PY - 2023/8/2

Y1 - 2023/8/2

N2 - We present results from a study addressing the unbiased water-splitting process and its side reactions on GaN-based photoelectrodes decorated with NiOx, FeOx, and CoOx nanoparticles. Observations involving physicochemical analyses of liquid and vapour phases after the experiments were performed in 1 M NaOH under ambient conditions. A water-splitting process with GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide. Quantification of the water-splitting chemical mechanism gave numerical values indicating an increase in the device performance and restriction of the GaN electrocorrosion with surface modifications of GaN structures. Hydrogen generation efficiencies are ηH2(bare GaN) = 1.23%, ηH2(NiOx/GaN) =4.31% , ηH2(FeOx/GaN) = 2.69%, ηH2(CoOx/GaN) = 2.31%. Photoelectrode etching reaction moieties Qetch/Q are 11.5%. 0.21%, 0.26% and 0.20% for bare n-GaN, NiOx/GaN, FeOx/GaN, and CoOx/GaN respectively.

AB - We present results from a study addressing the unbiased water-splitting process and its side reactions on GaN-based photoelectrodes decorated with NiOx, FeOx, and CoOx nanoparticles. Observations involving physicochemical analyses of liquid and vapour phases after the experiments were performed in 1 M NaOH under ambient conditions. A water-splitting process with GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide. Quantification of the water-splitting chemical mechanism gave numerical values indicating an increase in the device performance and restriction of the GaN electrocorrosion with surface modifications of GaN structures. Hydrogen generation efficiencies are ηH2(bare GaN) = 1.23%, ηH2(NiOx/GaN) =4.31% , ηH2(FeOx/GaN) = 2.69%, ηH2(CoOx/GaN) = 2.31%. Photoelectrode etching reaction moieties Qetch/Q are 11.5%. 0.21%, 0.26% and 0.20% for bare n-GaN, NiOx/GaN, FeOx/GaN, and CoOx/GaN respectively.

UR - http://hdl.handle.net/10754/693466

UR - http://pubs.rsc.org/en/Content/ArticleLanding/2023/CC/D3CC03387B

U2 - 10.1039/d3cc03387b

DO - 10.1039/d3cc03387b

M3 - Article

C2 - 37554101

SN - 1359-7345

JO - CHEMICAL COMMUNICATIONS

JF - CHEMICAL COMMUNICATIONS

ER -

Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes

Abstract

Bibliographical note

ASJC Scopus subject areas

UN SDGs

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