@inproceedings{aae0f238b6b34171a49d9ac2fe948e53,
title = "Towards the modeling of GaAs based 850 nm VCSEL with oxide confinement",
abstract = "The paper presents the structure for an oxide confined vertical cavity surfaceemitting laser (VCSEL) and the simulation results for its operation at 850 nm of the electromagnetic spectrum. In this kind of VCSEL, low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced, and it is found that the device finally yields good operational efficiency. Illustrations are made of a few features for the proposed device that govern it operational characteristics.",
author = "Mitani, {S. M.} and Alias, {M. S.} and Yahya, {M. R.} and Mat, {A. F.A.}",
year = "2007",
doi = "10.1109/TENCON.2007.4428872",
language = "English (US)",
isbn = "1424412722",
series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",
booktitle = "TENCON 2007 - 2007 IEEE Region 10 Conference",
note = "IEEE Region 10 Conference, TENCON 2007 ; Conference date: 30-10-2007 Through 02-11-2007",
}