Towards the modeling of GaAs based 850 nm VCSEL with oxide confinement

S. M. Mitani, M. S. Alias, M. R. Yahya, A. F.A. Mat

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


The paper presents the structure for an oxide confined vertical cavity surfaceemitting laser (VCSEL) and the simulation results for its operation at 850 nm of the electromagnetic spectrum. In this kind of VCSEL, low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced, and it is found that the device finally yields good operational efficiency. Illustrations are made of a few features for the proposed device that govern it operational characteristics.

Original languageEnglish (US)
Title of host publicationTENCON 2007 - 2007 IEEE Region 10 Conference
StatePublished - 2007
Externally publishedYes
EventIEEE Region 10 Conference, TENCON 2007 - Taipei, Taiwan, Province of China
Duration: Oct 30 2007Nov 2 2007

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON


OtherIEEE Region 10 Conference, TENCON 2007
Country/TerritoryTaiwan, Province of China

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering


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