Towards super-clean graphene

Li Lin; Jincan Zhang; Haisheng Su; Jiayu Li; Luzhao Sun; Zihao Wang; Fan Xu; Chang Liu; Sergei Lopatin; Yihan Zhu; Kaicheng Jia; Shulin Chen; Dingran Rui; Jingyu Sun; Ruiwen Xue; Peng Gao; Ning Kang; Yu Han; H. Q. Xu; Yang Cao; K. S. Novoselov; Zhongqun Tian; Bin Ren; Hailin Peng; Zhongfan Liu

doi:10.1038/s41467-019-09565-4

Towards super-clean graphene

Li Lin, Jincan Zhang, Haisheng Su, Jiayu Li, Luzhao Sun, Zihao Wang, Fan Xu, Chang Liu, Sergei Lopatin, Yihan Zhu, Kaicheng Jia, Shulin Chen, Dingran Rui, Jingyu Sun, Ruiwen Xue, Peng Gao, Ning Kang, Yu Han, H. Q. Xu, Yang CaoK. S. Novoselov, Zhongqun Tian, Bin Ren, Hailin Peng, Zhongfan Liu

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176 Scopus citations

Abstract

Impurities produced during the synthesis process of a material pose detrimental impacts upon the intrinsic properties and device performances of the as-obtained product. This effect is especially pronounced in graphene, where surface contamination has long been a critical, unresolved issue, given graphene’s two-dimensionality. Here we report the origins of surface contamination of graphene, which is primarily rooted in chemical vapour deposition production at elevated temperatures, rather than during transfer and storage. In turn, we demonstrate a design of Cu substrate architecture towards the scalable production of super-clean graphene (>99% clean regions). The readily available, super-clean graphene sheets contribute to an enhancement in the optical transparency and thermal conductivity, an exceptionally lower-level of electrical contact resistance and intrinsically hydrophilic nature. This work not only opens up frontiers for graphene growth but also provides exciting opportunities for the utilization of as-obtained super-clean graphene films for advanced applications.

Original language	English (US)
Journal	Nature Communications
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41467-019-09565-4
State	Published - Apr 23 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We thank Prof. Lutao Weng in Hong Kong University of Science and Technology for his help in TOF-SIMS. This work was financially supported by the National Basic Research Program of China (Nos. 2016YFA0200101, 2013CB932603 and 2014CB932500), the National Natural Science Foundation of China (Nos. 51432002, 51520105003, 21525310 and 51362029), and Beijing Municipal Science and Technology Commission (Nos. Z161100002116002 and Z161100002116021), and Suzhou Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Suzhou 215006, China.

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10.1038/s41467-019-09565-4

https://repository.kaust.edu.sa/bitstream/10754/656243/1/s41467-019-09565-4.pdf

Cite this

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title = "Towards super-clean graphene",

abstract = "Impurities produced during the synthesis process of a material pose detrimental impacts upon the intrinsic properties and device performances of the as-obtained product. This effect is especially pronounced in graphene, where surface contamination has long been a critical, unresolved issue, given graphene{\textquoteright}s two-dimensionality. Here we report the origins of surface contamination of graphene, which is primarily rooted in chemical vapour deposition production at elevated temperatures, rather than during transfer and storage. In turn, we demonstrate a design of Cu substrate architecture towards the scalable production of super-clean graphene (>99% clean regions). The readily available, super-clean graphene sheets contribute to an enhancement in the optical transparency and thermal conductivity, an exceptionally lower-level of electrical contact resistance and intrinsically hydrophilic nature. This work not only opens up frontiers for graphene growth but also provides exciting opportunities for the utilization of as-obtained super-clean graphene films for advanced applications.",

author = "Li Lin and Jincan Zhang and Haisheng Su and Jiayu Li and Luzhao Sun and Zihao Wang and Fan Xu and Chang Liu and Sergei Lopatin and Yihan Zhu and Kaicheng Jia and Shulin Chen and Dingran Rui and Jingyu Sun and Ruiwen Xue and Peng Gao and Ning Kang and Yu Han and Xu, {H. Q.} and Yang Cao and Novoselov, {K. S.} and Zhongqun Tian and Bin Ren and Hailin Peng and Zhongfan Liu",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We thank Prof. Lutao Weng in Hong Kong University of Science and Technology for his help in TOF-SIMS. This work was financially supported by the National Basic Research Program of China (Nos. 2016YFA0200101, 2013CB932603 and 2014CB932500), the National Natural Science Foundation of China (Nos. 51432002, 51520105003, 21525310 and 51362029), and Beijing Municipal Science and Technology Commission (Nos. Z161100002116002 and Z161100002116021), and Suzhou Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Suzhou 215006, China.",

year = "2019",

month = apr,

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doi = "10.1038/s41467-019-09565-4",

language = "English (US)",

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T1 - Towards super-clean graphene

AU - Lin, Li

AU - Zhang, Jincan

AU - Su, Haisheng

AU - Li, Jiayu

AU - Sun, Luzhao

AU - Wang, Zihao

AU - Xu, Fan

AU - Liu, Chang

AU - Lopatin, Sergei

AU - Zhu, Yihan

AU - Jia, Kaicheng

AU - Chen, Shulin

AU - Rui, Dingran

AU - Sun, Jingyu

AU - Xue, Ruiwen

AU - Gao, Peng

AU - Kang, Ning

AU - Han, Yu

AU - Xu, H. Q.

AU - Cao, Yang

AU - Novoselov, K. S.

AU - Tian, Zhongqun

AU - Ren, Bin

AU - Peng, Hailin

AU - Liu, Zhongfan

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We thank Prof. Lutao Weng in Hong Kong University of Science and Technology for his help in TOF-SIMS. This work was financially supported by the National Basic Research Program of China (Nos. 2016YFA0200101, 2013CB932603 and 2014CB932500), the National Natural Science Foundation of China (Nos. 51432002, 51520105003, 21525310 and 51362029), and Beijing Municipal Science and Technology Commission (Nos. Z161100002116002 and Z161100002116021), and Suzhou Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Suzhou 215006, China.

PY - 2019/4/23

Y1 - 2019/4/23

N2 - Impurities produced during the synthesis process of a material pose detrimental impacts upon the intrinsic properties and device performances of the as-obtained product. This effect is especially pronounced in graphene, where surface contamination has long been a critical, unresolved issue, given graphene’s two-dimensionality. Here we report the origins of surface contamination of graphene, which is primarily rooted in chemical vapour deposition production at elevated temperatures, rather than during transfer and storage. In turn, we demonstrate a design of Cu substrate architecture towards the scalable production of super-clean graphene (>99% clean regions). The readily available, super-clean graphene sheets contribute to an enhancement in the optical transparency and thermal conductivity, an exceptionally lower-level of electrical contact resistance and intrinsically hydrophilic nature. This work not only opens up frontiers for graphene growth but also provides exciting opportunities for the utilization of as-obtained super-clean graphene films for advanced applications.

AB - Impurities produced during the synthesis process of a material pose detrimental impacts upon the intrinsic properties and device performances of the as-obtained product. This effect is especially pronounced in graphene, where surface contamination has long been a critical, unresolved issue, given graphene’s two-dimensionality. Here we report the origins of surface contamination of graphene, which is primarily rooted in chemical vapour deposition production at elevated temperatures, rather than during transfer and storage. In turn, we demonstrate a design of Cu substrate architecture towards the scalable production of super-clean graphene (>99% clean regions). The readily available, super-clean graphene sheets contribute to an enhancement in the optical transparency and thermal conductivity, an exceptionally lower-level of electrical contact resistance and intrinsically hydrophilic nature. This work not only opens up frontiers for graphene growth but also provides exciting opportunities for the utilization of as-obtained super-clean graphene films for advanced applications.

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SN - 2041-1723

VL - 10

JO - Nature Communications

JF - Nature Communications

IS - 1

ER -

Towards super-clean graphene

Abstract

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