Towards doping-free silicon photovoltaics

Stefaan de Wolf

doi:10.1364/PV.2016.PM2B.3

Towards doping-free silicon photovoltaics

Stefaan de Wolf^*

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Silicon solar cells classically use impurity doping to extract photo-generated carriers. However, such doping brings along significant opto-electronic losses, limiting ultimate device performance. Here, new doping-free device fabrication approaches are discussed for highefficiency silicon photovoltaics.

Original language	English (US)
Title of host publication	Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016
Publisher	OSA - The Optical Society
ISBN (Print)	9780960038046
DOIs	https://doi.org/10.1364/PV.2016.PM2B.3
State	Published - Jul 21 2014
Event	Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016 - Leipzig, Germany Duration: Nov 14 2016 → Nov 17 2016

Publication series

Name	Optics InfoBase Conference Papers

Other

Other	Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016
Country/Territory	Germany
City	Leipzig
Period	11/14/16 → 11/17/16

Bibliographical note

Publisher Copyright:
© OSA 2016.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Access to Document

10.1364/PV.2016.PM2B.3

Cite this

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title = "Towards doping-free silicon photovoltaics",

abstract = "Silicon solar cells classically use impurity doping to extract photo-generated carriers. However, such doping brings along significant opto-electronic losses, limiting ultimate device performance. Here, new doping-free device fabrication approaches are discussed for highefficiency silicon photovoltaics.",

author = "{de Wolf}, Stefaan",

note = "Publisher Copyright: {\textcopyright} OSA 2016.; Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016 ; Conference date: 14-11-2016 Through 17-11-2016",

year = "2014",

month = jul,

day = "21",

doi = "10.1364/PV.2016.PM2B.3",

language = "English (US)",

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PY - 2014/7/21

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N2 - Silicon solar cells classically use impurity doping to extract photo-generated carriers. However, such doping brings along significant opto-electronic losses, limiting ultimate device performance. Here, new doping-free device fabrication approaches are discussed for highefficiency silicon photovoltaics.

AB - Silicon solar cells classically use impurity doping to extract photo-generated carriers. However, such doping brings along significant opto-electronic losses, limiting ultimate device performance. Here, new doping-free device fabrication approaches are discussed for highefficiency silicon photovoltaics.

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U2 - 10.1364/PV.2016.PM2B.3

DO - 10.1364/PV.2016.PM2B.3

M3 - Conference contribution

AN - SCOPUS:85019524877

SN - 9780960038046

T3 - Optics InfoBase Conference Papers

BT - Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016

PB - OSA - The Optical Society

T2 - Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016

Y2 - 14 November 2016 through 17 November 2016

ER -

Towards doping-free silicon photovoltaics

Abstract

Publication series

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Bibliographical note

ASJC Scopus subject areas

Access to Document

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