Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers

Jung-Hong Min; Kuang-Hui Li; Yong-Hyeon Kim; Jungwook Min; Chun Hong Kang; Kyoung-Ho Kim; Jae-Seong Lee; Kwang Jae Lee; Seong-Min Jeong; Dong-Seon Lee; Si-Young Bae; Tien Khee Ng; Boon S. Ooi

doi:10.1021/acsami.1c01042

Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers

Jung-Hong Min, Kuang-Hui Li, Yong-Hyeon Kim, Jungwook Min, Chun Hong Kang, Kyoung-Ho Kim, Jae-Seong Lee, Kwang Jae Lee, Seong-Min Jeong, Dong-Seon Lee, Si-Young Bae, Tien Khee Ng, Boon S. Ooi

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area β-Ga2O3 nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga2O3 direct-epitaxy on the EG. The β-Ga2O3 layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.

Original language	English (US)
Journal	ACS Applied Materials & Interfaces
DOIs	https://doi.org/10.1021/acsami.1c01042
State	Published - Mar 12 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-03-30
Acknowledged KAUST grant number(s): BAS/1/1614-01-01, KACST TIC R2-FP-008
Acknowledgements: The work was support by King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01. We acknowledge access to the KAUST Imaging and Characterization Core Lab for optical and electron microscopy measurements, and access to the Nanofabrication Core Lab for fabrication process of Ni stressor and devices. This work was also supported by Ceramic Strategic Research Program (KPP200001) through Korea Institute of Ceramic Engineering and Technology (KICET). J.-W.M., T.K.N., and B.S.O. gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (grant no. KACST TIC R2-FP-008).

ASJC Scopus subject areas

General Materials Science

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10.1021/acsami.1c01042

https://repository.kaust.edu.sa/bitstream/10754/668353/1/acsami.1c01042.pdf

Cite this

@article{f2c017f313b94d4a863cbf871371f8ef,

title = "Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers",

abstract = "Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area β-Ga2O3 nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga2O3 direct-epitaxy on the EG. The β-Ga2O3 layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.",

author = "Jung-Hong Min and Kuang-Hui Li and Yong-Hyeon Kim and Jungwook Min and Kang, {Chun Hong} and Kyoung-Ho Kim and Jae-Seong Lee and Lee, {Kwang Jae} and Seong-Min Jeong and Dong-Seon Lee and Si-Young Bae and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2021-03-30 Acknowledged KAUST grant number(s): BAS/1/1614-01-01, KACST TIC R2-FP-008 Acknowledgements: The work was support by King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01. We acknowledge access to the KAUST Imaging and Characterization Core Lab for optical and electron microscopy measurements, and access to the Nanofabrication Core Lab for fabrication process of Ni stressor and devices. This work was also supported by Ceramic Strategic Research Program (KPP200001) through Korea Institute of Ceramic Engineering and Technology (KICET). J.-W.M., T.K.N., and B.S.O. gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (grant no. KACST TIC R2-FP-008).",

year = "2021",

month = mar,

day = "12",

doi = "10.1021/acsami.1c01042",

language = "English (US)",

journal = "ACS Applied Materials & Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

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T1 - Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers

AU - Min, Jung-Hong

AU - Li, Kuang-Hui

AU - Kim, Yong-Hyeon

AU - Min, Jungwook

AU - Kang, Chun Hong

AU - Kim, Kyoung-Ho

AU - Lee, Jae-Seong

AU - Lee, Kwang Jae

AU - Jeong, Seong-Min

AU - Lee, Dong-Seon

AU - Bae, Si-Young

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2021-03-30 Acknowledged KAUST grant number(s): BAS/1/1614-01-01, KACST TIC R2-FP-008 Acknowledgements: The work was support by King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01. We acknowledge access to the KAUST Imaging and Characterization Core Lab for optical and electron microscopy measurements, and access to the Nanofabrication Core Lab for fabrication process of Ni stressor and devices. This work was also supported by Ceramic Strategic Research Program (KPP200001) through Korea Institute of Ceramic Engineering and Technology (KICET). J.-W.M., T.K.N., and B.S.O. gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (grant no. KACST TIC R2-FP-008).

PY - 2021/3/12

Y1 - 2021/3/12

N2 - Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area β-Ga2O3 nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga2O3 direct-epitaxy on the EG. The β-Ga2O3 layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.

AB - Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area β-Ga2O3 nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga2O3 direct-epitaxy on the EG. The β-Ga2O3 layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.

UR - http://hdl.handle.net/10754/668353

UR - https://pubs.acs.org/doi/10.1021/acsami.1c01042

U2 - 10.1021/acsami.1c01042

DO - 10.1021/acsami.1c01042

M3 - Article

C2 - 33709688

SN - 1944-8244

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

ER -

Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers

Abstract

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ASJC Scopus subject areas

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