Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles

Chun Wei Lee; Cheng Hui Weng; Li Wei; Yuan Chen; Mary B. Chan-Park; Chuen Horng Tsai; Keh Chyang Leou; C. H.Patrick Poa; Junling Wang; Lain Jong Li

doi:10.1021/jp805434d

Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles

Chun Wei Lee, Cheng Hui Weng, Li Wei, Yuan Chen, Mary B. Chan-Park, Chuen Horng Tsai, Keh Chyang Leou, C. H.Patrick Poa, Junling Wang, Lain Jong Li^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60-65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic - aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by ∼1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.

Original language	English (US)
Pages (from-to)	12089-12091
Number of pages	3
Journal	JOURNAL OF PHYSICAL CHEMISTRY C
Volume	112
Issue number	32
DOIs	https://doi.org/10.1021/jp805434d
State	Published - Aug 14 2008
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/jp805434d

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title = "Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles",

abstract = "Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60-65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic - aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by ∼1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.",

author = "Lee, {Chun Wei} and Weng, {Cheng Hui} and Li Wei and Yuan Chen and Chan-Park, {Mary B.} and Tsai, {Chuen Horng} and Leou, {Keh Chyang} and Poa, {C. H.Patrick} and Junling Wang and Li, {Lain Jong}",

year = "2008",

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doi = "10.1021/jp805434d",

language = "English (US)",

volume = "112",

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journal = "JOURNAL OF PHYSICAL CHEMISTRY C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "32",

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T1 - Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles

AU - Lee, Chun Wei

AU - Weng, Cheng Hui

AU - Wei, Li

AU - Chen, Yuan

AU - Chan-Park, Mary B.

AU - Tsai, Chuen Horng

AU - Leou, Keh Chyang

AU - Poa, C. H.Patrick

AU - Wang, Junling

AU - Li, Lain Jong

PY - 2008/8/14

Y1 - 2008/8/14

N2 - Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60-65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic - aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by ∼1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.

AB - Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60-65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic - aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by ∼1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.

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Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles

Abstract

ASJC Scopus subject areas

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