@inproceedings{7eb87b03aaa848c3a72cdc13f48dfafe,
title = "Top-emitting 980-nm vertical-cavity surface-emitting laser diodes with improved optical power",
abstract = "Top-emitting, oxide-confined, polyimide-planarized 980-nm VCSELs with copper-plated heatsinks were fabricated and characterized. Increasing the plated heatsink radius from 0-μm to 4-μm larger than the mesa diameter for lasers with 8-μm oxide aperture diameter reduced the measured thermal impedance, increased the maximum bias current density, and increased the maximum output optical power achieved by a 29%, 37%, and 73%, respectively. VCSELs with oxide aperture diameter and heatsink overlap of 8-μm and 4-μm, respectively, demonstrated 17°C decrease in the internal device temperature (i.e. active region temperature) at the maximum output optical power. Devices with similar mesa diameters of 26-μm and different heatsink overlaps exhibited a threshold bias current and a total series resistance of (630±4%)μA and ∼95Ω, respectively.",
keywords = "Cu-plated, Laser diodes, Semiconductor lasers, Thermal resistance, VCSELs, metal heatsinks",
author = "Al-Omari, {A. N.} and Alias, {M. S.} and Lear, {K. L.}",
year = "2012",
doi = "10.1109/ICP.2012.6379873",
language = "English (US)",
isbn = "9781467314633",
series = "ICP 2012 - 3rd International Conference on Photonics 2012, Proceedings",
pages = "76--79",
booktitle = "ICP 2012 - 3rd International Conference on Photonics 2012, Proceedings",
note = "3rd International Conference on Photonics, ICP 2012 ; Conference date: 01-10-2012 Through 03-10-2012",
}