TOF mobility measurements in pristine films of P3HT: Control of hole injection and influence of film thickness

Amy M. Ballantyne; Joanne S. Wilson; Jenny Nelson; Donal D.C. Bradley; James R. Durrant; Martin Heeney; Warren Duffy; Iain McCulloch

doi:10.1117/12.680655

TOF mobility measurements in pristine films of P3HT: Control of hole injection and influence of film thickness

Amy M. Ballantyne, Joanne S. Wilson, Jenny Nelson, Donal D.C. Bradley, James R. Durrant, Martin Heeney, Warren Duffy, Iain McCulloch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Scopus citations

Abstract

Time-of-flight (TOF) photocurrent measurements have been used to study charge transport in films of regioregular poly(3-hexylthiophene) (P3HT). Devices in which the P3HT film had been deposited directly onto an indium tin oxide (ITO) electrode produced high dark currents as a result of hole injection into P3HT from ITO. Photocurrent transients in such devices were disperse. It was found however, that these dark currents could be significantly reduced by inserting a dense TiO2 layer between the ITO and the polymer film. The resulting devices gave non-dispersive transients with hole and electron mobilities in the range of 1 - 2 10-4 cm2 V-1 s-1 at room temperature. The mobility values were observed to be almost independent of film thickness over the range of 350 nm to 4.3 μm. Temperature dependence studies showed a weak dependence on temperature with a low energetic disorder parameter according to analysis using the Gaussian Disorder Model (GDM) of 71 meV.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
DOIs	https://doi.org/10.1117/12.680655
State	Published - Dec 1 2006
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-02-14

Access to Document

10.1117/12.680655

Cite this

@inproceedings{7e30d516b645445b87fb22708cb22038,

title = "TOF mobility measurements in pristine films of P3HT: Control of hole injection and influence of film thickness",

abstract = "Time-of-flight (TOF) photocurrent measurements have been used to study charge transport in films of regioregular poly(3-hexylthiophene) (P3HT). Devices in which the P3HT film had been deposited directly onto an indium tin oxide (ITO) electrode produced high dark currents as a result of hole injection into P3HT from ITO. Photocurrent transients in such devices were disperse. It was found however, that these dark currents could be significantly reduced by inserting a dense TiO2 layer between the ITO and the polymer film. The resulting devices gave non-dispersive transients with hole and electron mobilities in the range of 1 - 2 10-4 cm2 V-1 s-1 at room temperature. The mobility values were observed to be almost independent of film thickness over the range of 350 nm to 4.3 μm. Temperature dependence studies showed a weak dependence on temperature with a low energetic disorder parameter according to analysis using the Gaussian Disorder Model (GDM) of 71 meV.",

author = "Ballantyne, {Amy M.} and Wilson, {Joanne S.} and Jenny Nelson and Bradley, {Donal D.C.} and Durrant, {James R.} and Martin Heeney and Warren Duffy and Iain McCulloch",

note = "Generated from Scopus record by KAUST IRTS on 2023-02-14",

year = "2006",

month = dec,

day = "1",

doi = "10.1117/12.680655",

language = "English (US)",

isbn = "0819464139",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - TOF mobility measurements in pristine films of P3HT: Control of hole injection and influence of film thickness

AU - Ballantyne, Amy M.

AU - Wilson, Joanne S.

AU - Nelson, Jenny

AU - Bradley, Donal D.C.

AU - Durrant, James R.

AU - Heeney, Martin

AU - Duffy, Warren

AU - McCulloch, Iain

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Time-of-flight (TOF) photocurrent measurements have been used to study charge transport in films of regioregular poly(3-hexylthiophene) (P3HT). Devices in which the P3HT film had been deposited directly onto an indium tin oxide (ITO) electrode produced high dark currents as a result of hole injection into P3HT from ITO. Photocurrent transients in such devices were disperse. It was found however, that these dark currents could be significantly reduced by inserting a dense TiO2 layer between the ITO and the polymer film. The resulting devices gave non-dispersive transients with hole and electron mobilities in the range of 1 - 2 10-4 cm2 V-1 s-1 at room temperature. The mobility values were observed to be almost independent of film thickness over the range of 350 nm to 4.3 μm. Temperature dependence studies showed a weak dependence on temperature with a low energetic disorder parameter according to analysis using the Gaussian Disorder Model (GDM) of 71 meV.

AB - Time-of-flight (TOF) photocurrent measurements have been used to study charge transport in films of regioregular poly(3-hexylthiophene) (P3HT). Devices in which the P3HT film had been deposited directly onto an indium tin oxide (ITO) electrode produced high dark currents as a result of hole injection into P3HT from ITO. Photocurrent transients in such devices were disperse. It was found however, that these dark currents could be significantly reduced by inserting a dense TiO2 layer between the ITO and the polymer film. The resulting devices gave non-dispersive transients with hole and electron mobilities in the range of 1 - 2 10-4 cm2 V-1 s-1 at room temperature. The mobility values were observed to be almost independent of film thickness over the range of 350 nm to 4.3 μm. Temperature dependence studies showed a weak dependence on temperature with a low energetic disorder parameter according to analysis using the Gaussian Disorder Model (GDM) of 71 meV.

UR - http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.680655

UR - http://www.scopus.com/inward/record.url?scp=33846207921&partnerID=8YFLogxK

U2 - 10.1117/12.680655

DO - 10.1117/12.680655

M3 - Conference contribution

SN - 0819464139

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

TOF mobility measurements in pristine films of P3HT: Control of hole injection and influence of film thickness

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this