TOF mobility measurements in pristine films of P3HT: Control of hole injection and influence of film thickness

Amy M. Ballantyne*, Joanne S. Wilson, Jenny Nelson, Donal D.C. Bradley, James R. Durrant, Martin Heeney, Warren Duffy, Iain McCulloch

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations


Time-of-flight (TOF) photocurrent measurements have been used to study charge transport in films of regioregular poly(3-hexylthiophene) (P3HT). Devices in which the P3HT film had been deposited directly onto an indium tin oxide (ITO) electrode produced high dark currents as a result of hole injection into P3HT from ITO. Photocurrent transients in such devices were disperse. It was found however, that these dark currents could be significantly reduced by inserting a dense TiO2 layer between the ITO and the polymer film. The resulting devices gave non-dispersive transients with hole and electron mobilities in the range of 1 - 2 10-4 cm2 V-1 s-1 at room temperature. The mobility values were observed to be almost independent of film thickness over the range of 350 nm to 4.3 μm. Temperature dependence studies showed a weak dependence on temperature with a low energetic disorder parameter according to analysis using the Gaussian Disorder Model (GDM) of 71 meV.

Original languageEnglish (US)
Title of host publicationOrganic Photovoltaics VII
StatePublished - 2006
Externally publishedYes
EventOrganic Photovoltaics VII - San Diego, CA, United States
Duration: Aug 15 2006Aug 17 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOrganic Photovoltaics VII
Country/TerritoryUnited States
CitySan Diego, CA


  • Charge mobility
  • Poly(3-hexylthiophene)
  • Time-of-flight

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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