TMD FinFET with 4 nm thin body and back gate control for future low power technology

Min-Cheng Chen, Kai-Shin Li, Lain-Jong Li, Ang-Yu Lu, Ming-Yang Li, Yung-Huang Chang, Chang-Hsien Lin, Yi-Ju Chen, Yun-Fang Hou, Chun-Chi Chen, Bo-Wei Wu, Cheng-San Wu, Ivy Yang, Yao-Jen Lee, Jia-Min Shieh, Wen-Kuan Yeh, Jyun-Hong Shih, Po-Cheng Su, Angada B. Sachid, Tahui WangFu-Liang Yang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Scopus citations


A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.
Original languageEnglish (US)
Title of host publication2015 IEEE International Electron Devices Meeting (IEDM)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages1
ISBN (Print)9781467398947
StatePublished - Dec 2015

Bibliographical note

KAUST Repository Item: Exported on 2021-04-14
Acknowledgements: This work was performed by the National Nano Device Laboratories facilities and supported by the Ministry of Science and Technology, Taiwan and NCTU-UCB I-RiCE program


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