TMD FinFET with 4 nm thin body and back gate control for future low power technology

Min-Cheng Chen; Kai-Shin Li; Lain-Jong Li; Ang-Yu Lu; Ming-Yang Li; Yung-Huang Chang; Chang-Hsien Lin; Yi-Ju Chen; Yun-Fang Hou; Chun-Chi Chen; Bo-Wei Wu; Cheng-San Wu; Ivy Yang; Yao-Jen Lee; Jia-Min Shieh; Wen-Kuan Yeh; Jyun-Hong Shih; Po-Cheng Su; Angada B. Sachid; Tahui Wang; Fu-Liang Yang; Chenming Hu

doi:10.1109/iedm.2015.7409813

TMD FinFET with 4 nm thin body and back gate control for future low power technology

Min-Cheng Chen, Kai-Shin Li, Lain-Jong Li, Ang-Yu Lu, Ming-Yang Li, Yung-Huang Chang, Chang-Hsien Lin, Yi-Ju Chen, Yun-Fang Hou, Chun-Chi Chen, Bo-Wei Wu, Cheng-San Wu, Ivy Yang, Yao-Jen Lee, Jia-Min Shieh, Wen-Kuan Yeh, Jyun-Hong Shih, Po-Cheng Su, Angada B. Sachid, Tahui WangFu-Liang Yang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

25 Scopus citations

Abstract

A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.

Original language	English (US)
Title of host publication	2015 IEEE International Electron Devices Meeting (IEDM)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	32.2.1-32.2.4
Number of pages	1
ISBN (Print)	9781467398947
DOIs	https://doi.org/10.1109/iedm.2015.7409813
State	Published - Dec 2015

Bibliographical note

KAUST Repository Item: Exported on 2021-04-14
Acknowledgements: This work was performed by the National Nano Device Laboratories facilities and supported by the Ministry of Science and Technology, Taiwan and NCTU-UCB I-RiCE program

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10.1109/iedm.2015.7409813

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Chen, M-C., Li, K-S., Li, L-J., Lu, A-Y., Li, M-Y., Chang, Y-H., Lin, C-H., Chen, Y-J., Hou, Y-F., Chen, C-C., Wu, B-W., Wu, C-S., Yang, I., Lee, Y-J., Shieh, J-M., Yeh, W-K., Shih, J-H., Su, P-C., Sachid, A. B., ... Hu, C. (2015). TMD FinFET with 4 nm thin body and back gate control for future low power technology. In 2015 IEEE International Electron Devices Meeting (IEDM) (pp. 32.2.1-32.2.4). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/iedm.2015.7409813

@inproceedings{b09cfb41fcfe4656bdd7377e1e324162,

title = "TMD FinFET with 4 nm thin body and back gate control for future low power technology",

abstract = "A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.",

author = "Min-Cheng Chen and Kai-Shin Li and Lain-Jong Li and Ang-Yu Lu and Ming-Yang Li and Yung-Huang Chang and Chang-Hsien Lin and Yi-Ju Chen and Yun-Fang Hou and Chun-Chi Chen and Bo-Wei Wu and Cheng-San Wu and Ivy Yang and Yao-Jen Lee and Jia-Min Shieh and Wen-Kuan Yeh and Jyun-Hong Shih and Po-Cheng Su and Sachid, {Angada B.} and Tahui Wang and Fu-Liang Yang and Chenming Hu",

note = "KAUST Repository Item: Exported on 2021-04-14 Acknowledgements: This work was performed by the National Nano Device Laboratories facilities and supported by the Ministry of Science and Technology, Taiwan and NCTU-UCB I-RiCE program",

year = "2015",

month = dec,

doi = "10.1109/iedm.2015.7409813",

language = "English (US)",

isbn = "9781467398947",

pages = "32.2.1--32.2.4",

booktitle = "2015 IEEE International Electron Devices Meeting (IEDM)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

Chen, M-C, Li, K-S, Li, L-J, Lu, A-Y, Li, M-Y, Chang, Y-H, Lin, C-H, Chen, Y-J, Hou, Y-F, Chen, C-C, Wu, B-W, Wu, C-S, Yang, I, Lee, Y-J, Shieh, J-M, Yeh, W-K, Shih, J-H, Su, P-C, Sachid, AB, Wang, T, Yang, F-L & Hu, C 2015, TMD FinFET with 4 nm thin body and back gate control for future low power technology. in 2015 IEEE International Electron Devices Meeting (IEDM). Institute of Electrical and Electronics Engineers (IEEE), pp. 32.2.1-32.2.4. https://doi.org/10.1109/iedm.2015.7409813

TY - GEN

T1 - TMD FinFET with 4 nm thin body and back gate control for future low power technology

AU - Chen, Min-Cheng

AU - Li, Kai-Shin

AU - Li, Lain-Jong

AU - Lu, Ang-Yu

AU - Li, Ming-Yang

AU - Chang, Yung-Huang

AU - Lin, Chang-Hsien

AU - Chen, Yi-Ju

AU - Hou, Yun-Fang

AU - Chen, Chun-Chi

AU - Wu, Bo-Wei

AU - Wu, Cheng-San

AU - Yang, Ivy

AU - Lee, Yao-Jen

AU - Shieh, Jia-Min

AU - Yeh, Wen-Kuan

AU - Shih, Jyun-Hong

AU - Su, Po-Cheng

AU - Sachid, Angada B.

AU - Wang, Tahui

AU - Yang, Fu-Liang

AU - Hu, Chenming

N1 - KAUST Repository Item: Exported on 2021-04-14 Acknowledgements: This work was performed by the National Nano Device Laboratories facilities and supported by the Ministry of Science and Technology, Taiwan and NCTU-UCB I-RiCE program

PY - 2015/12

Y1 - 2015/12

N2 - A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.

AB - A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.

UR - http://hdl.handle.net/10754/667952

UR - http://ieeexplore.ieee.org/document/7409813/

UR - http://www.scopus.com/inward/record.url?scp=84964076479&partnerID=8YFLogxK

U2 - 10.1109/iedm.2015.7409813

DO - 10.1109/iedm.2015.7409813

M3 - Conference contribution

AN - SCOPUS:84964076479

SN - 9781467398947

SP - 32.2.1-32.2.4

BT - 2015 IEEE International Electron Devices Meeting (IEDM)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

TMD FinFET with 4 nm thin body and back gate control for future low power technology

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