Abstract
A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.
Original language | English (US) |
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Title of host publication | 2015 IEEE International Electron Devices Meeting, IEDM 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 32.2.1-32.2.4 |
ISBN (Electronic) | 9781467398930 |
DOIs | |
State | Published - Feb 16 2015 |
Event | 61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: Dec 7 2015 → Dec 9 2015 |
Publication series
Name | Technical Digest - International Electron Devices Meeting, IEDM |
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Volume | 2016-February |
ISSN (Print) | 0163-1918 |
Conference
Conference | 61st IEEE International Electron Devices Meeting, IEDM 2015 |
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Country/Territory | United States |
City | Washington |
Period | 12/7/15 → 12/9/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering