Abstract
A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.
Original language | English (US) |
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Title of host publication | 2015 IEEE International Electron Devices Meeting (IEDM) |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 32.2.1-32.2.4 |
Number of pages | 1 |
ISBN (Print) | 9781467398947 |
DOIs | |
State | Published - Dec 2015 |
Bibliographical note
KAUST Repository Item: Exported on 2021-04-14Acknowledgements: This work was performed by the National Nano Device Laboratories facilities and supported by the Ministry of Science and Technology, Taiwan and NCTU-UCB I-RiCE program