TMD FinFET with 4 nm thin body and back gate control for future low power technology

Min Cheng Chen; Kai Shin Li; Lain Jong Li; Ang Yu Lu; Ming Yang Li; Yung Huang Chang; Chang Hsien Lin; Yi Ju Chen; Yun Fang Hou; Chun Chi Chen; Bo Wei Wu; Cheng San Wu; Ivy Yang; Yao Jen Lee; Jia Min Shieh; Wen Kuan Yeh; Jyun Hong Shih; Po Cheng Su; Angada B. Sachid; Tahui Wang; Fu Liang Yang; Chenming Hu

doi:10.1109/IEDM.2015.7409813

TMD FinFET with 4 nm thin body and back gate control for future low power technology

Min Cheng Chen, Kai Shin Li, Lain Jong Li, Ang Yu Lu, Ming Yang Li, Yung Huang Chang, Chang Hsien Lin, Yi Ju Chen, Yun Fang Hou, Chun Chi Chen, Bo Wei Wu, Cheng San Wu, Ivy Yang, Yao Jen Lee, Jia Min Shieh, Wen Kuan Yeh, Jyun Hong Shih, Po Cheng Su, Angada B. Sachid, Tahui WangFu Liang Yang, Chenming Hu

Physical Sciences and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

31 Scopus citations

Abstract

A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.

Original language	English (US)
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	32.2.1-32.2.4
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409813
State	Published - Feb 16 2015
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: Dec 7 2015 → Dec 9 2015

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-February
ISSN (Print)	0163-1918

Conference

Conference	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	12/7/15 → 12/9/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1109/IEDM.2015.7409813

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Chen, M. C., Li, K. S., Li, L. J., Lu, A. Y., Li, M. Y., Chang, Y. H., Lin, C. H., Chen, Y. J., Hou, Y. F., Chen, C. C., Wu, B. W., Wu, C. S., Yang, I., Lee, Y. J., Shieh, J. M., Yeh, W. K., Shih, J. H., Su, P. C., Sachid, A. B., ... Hu, C. (2015). TMD FinFET with 4 nm thin body and back gate control for future low power technology. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 32.2.1-32.2.4). Article 7409813 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409813

@inproceedings{b09cfb41fcfe4656bdd7377e1e324162,

title = "TMD FinFET with 4 nm thin body and back gate control for future low power technology",

abstract = "A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.",

author = "Chen, {Min Cheng} and Li, {Kai Shin} and Li, {Lain Jong} and Lu, {Ang Yu} and Li, {Ming Yang} and Chang, {Yung Huang} and Lin, {Chang Hsien} and Chen, {Yi Ju} and Hou, {Yun Fang} and Chen, {Chun Chi} and Wu, {Bo Wei} and Wu, {Cheng San} and Ivy Yang and Lee, {Yao Jen} and Shieh, {Jia Min} and Yeh, {Wen Kuan} and Shih, {Jyun Hong} and Su, {Po Cheng} and Sachid, {Angada B.} and Tahui Wang and Yang, {Fu Liang} and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",

year = "2015",

month = feb,

day = "16",

doi = "10.1109/IEDM.2015.7409813",

language = "English (US)",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "32.2.1--32.2.4",

booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",

address = "United States",

}

Chen, MC, Li, KS, Li, LJ, Lu, AY, Li, MY, Chang, YH, Lin, CH, Chen, YJ, Hou, YF, Chen, CC, Wu, BW, Wu, CS, Yang, I, Lee, YJ, Shieh, JM, Yeh, WK, Shih, JH, Su, PC, Sachid, AB, Wang, T, Yang, FL & Hu, C 2015, TMD FinFET with 4 nm thin body and back gate control for future low power technology. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409813, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 32.2.1-32.2.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 12/7/15. https://doi.org/10.1109/IEDM.2015.7409813

TMD FinFET with 4 nm thin body and back gate control for future low power technology. / Chen, Min Cheng; Li, Kai Shin; Li, Lain Jong et al.
2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 32.2.1-32.2.4 7409813 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - TMD FinFET with 4 nm thin body and back gate control for future low power technology

AU - Chen, Min Cheng

AU - Li, Kai Shin

AU - Li, Lain Jong

AU - Lu, Ang Yu

AU - Li, Ming Yang

AU - Chang, Yung Huang

AU - Lin, Chang Hsien

AU - Chen, Yi Ju

AU - Hou, Yun Fang

AU - Chen, Chun Chi

AU - Wu, Bo Wei

AU - Wu, Cheng San

AU - Yang, Ivy

AU - Lee, Yao Jen

AU - Shieh, Jia Min

AU - Yeh, Wen Kuan

AU - Shih, Jyun Hong

AU - Su, Po Cheng

AU - Sachid, Angada B.

AU - Wang, Tahui

AU - Yang, Fu Liang

AU - Hu, Chenming

PY - 2015/2/16

Y1 - 2015/2/16

N2 - A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.

AB - A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.

UR - http://www.scopus.com/inward/record.url?scp=84964076479&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2015.7409813

DO - 10.1109/IEDM.2015.7409813

M3 - Conference contribution

AN - SCOPUS:84964076479

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 32.2.1-32.2.4

BT - 2015 IEEE International Electron Devices Meeting, IEDM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 61st IEEE International Electron Devices Meeting, IEDM 2015

Y2 - 7 December 2015 through 9 December 2015

ER -

Chen MC, Li KS, Li LJ, Lu AY, Li MY, Chang YH et al. TMD FinFET with 4 nm thin body and back gate control for future low power technology. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 32.2.1-32.2.4. 7409813. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2015.7409813

TMD FinFET with 4 nm thin body and back gate control for future low power technology

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Bibliographical note

ASJC Scopus subject areas

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