Abstract
Reliable operation of UV AlGaN-based nanowires-LED at high injection current was realized by incorporating a Ti-pre-orienting/TaN-diffusion-barrier bilayer, thus enhancing external quantum efficiency, and resolving the existing device degradation issue in group-III-nanowires-on-silicon devices.
Original language | English (US) |
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Title of host publication | Conference on Lasers and Electro-Optics |
Publisher | The Optical Society |
ISBN (Print) | 9781943580422 |
DOIs | |
State | Published - May 7 2018 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008 and from KAUST baseline funding, BAS/1/1614-01-01.