Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Chuanju Wang; Xiangming Xu; Shubham Tyagi; Paresh C. Rout; Udo Schwingenschlögl; Biplab Sarkar; Vishal Khandelwal; Xinke Liu; Linfei Gao; Mohamed Nejib Hedhili; Husam N. Alshareef; Xiaohang Li

doi:10.1002/adma.202211738

Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Chuanju Wang, Xiangming Xu, Shubham Tyagi, Paresh C. Rout, Udo Schwingenschlögl, Biplab Sarkar, Vishal Khandelwal, Xinke Liu, Linfei Gao, Mohamed Nejib Hedhili, Husam N. Alshareef^*, Xiaohang Li^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti₃C₂T_x MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off-state current (I_OFF) of 10⁻⁷ mA mm⁻¹, a record high I_ON/I_OFF current ratio of ≈10¹³ (which is six orders of magnitude higher than conventional Ni/Au contact), a high off-state drain breakdown voltage of 1085 V, and a near-ideal subthreshold swing of 61 mV dec⁻¹. This work shows the great potential of MXene films as gate electrodes in wide-bandgap semiconductor devices.

Original language	English (US)
Article number	2211738
Journal	Advanced Materials
Volume	35
Issue number	22
DOIs	https://doi.org/10.1002/adma.202211738
State	Published - Jun 1 2023

Bibliographical note

Funding Information:
C.W. and X.X. contributed equally to this work. The research reported in this publication was funded by the King Abdullah University of Science and Technology.

Publisher Copyright:
© 2023 Wiley-VCH GmbH.

Keywords

GaN HEMTs
near-ideal subthreshold swing
record high I /I ratio
Ti C T MXene
vdWs heterojunction

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.202211738

Cite this

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title = "Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors",

abstract = "Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3C2Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off-state current (IOFF) of 10−7 mA mm−1, a record high ION/IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off-state drain breakdown voltage of 1085 V, and a near-ideal subthreshold swing of 61 mV dec−1. This work shows the great potential of MXene films as gate electrodes in wide-bandgap semiconductor devices.",

keywords = "GaN HEMTs, near-ideal subthreshold swing, record high I /I ratio, Ti C T MXene, vdWs heterojunction",

author = "Chuanju Wang and Xiangming Xu and Shubham Tyagi and Rout, {Paresh C.} and Udo Schwingenschl{\"o}gl and Biplab Sarkar and Vishal Khandelwal and Xinke Liu and Linfei Gao and Hedhili, {Mohamed Nejib} and Alshareef, {Husam N.} and Xiaohang Li",

note = "Funding Information: C.W. and X.X. contributed equally to this work. The research reported in this publication was funded by the King Abdullah University of Science and Technology. Publisher Copyright: {\textcopyright} 2023 Wiley-VCH GmbH.",

year = "2023",

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doi = "10.1002/adma.202211738",

language = "English (US)",

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T1 - Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

AU - Wang, Chuanju

AU - Xu, Xiangming

AU - Tyagi, Shubham

AU - Rout, Paresh C.

AU - Schwingenschlögl, Udo

AU - Sarkar, Biplab

AU - Khandelwal, Vishal

AU - Liu, Xinke

AU - Gao, Linfei

AU - Hedhili, Mohamed Nejib

AU - Alshareef, Husam N.

AU - Li, Xiaohang

N1 - Funding Information: C.W. and X.X. contributed equally to this work. The research reported in this publication was funded by the King Abdullah University of Science and Technology. Publisher Copyright: © 2023 Wiley-VCH GmbH.

PY - 2023/6/1

Y1 - 2023/6/1

N2 - Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3C2Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off-state current (IOFF) of 10−7 mA mm−1, a record high ION/IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off-state drain breakdown voltage of 1085 V, and a near-ideal subthreshold swing of 61 mV dec−1. This work shows the great potential of MXene films as gate electrodes in wide-bandgap semiconductor devices.

AB - Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3C2Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off-state current (IOFF) of 10−7 mA mm−1, a record high ION/IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off-state drain breakdown voltage of 1085 V, and a near-ideal subthreshold swing of 61 mV dec−1. This work shows the great potential of MXene films as gate electrodes in wide-bandgap semiconductor devices.

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