Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Chuanju Wang, Xiangming Xu, Shubham Tyagi, Paresh C. Rout, Udo Schwingenschlögl, Biplab Sarkar, Vishal Khandelwal, Xinke Liu, Linfei Gao, Mohamed Nejib Hedhili, Husam N. Alshareef*, Xiaohang Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3C2Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off-state current (IOFF) of 10−7 mA mm−1, a record high ION/IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off-state drain breakdown voltage of 1085 V, and a near-ideal subthreshold swing of 61 mV dec−1. This work shows the great potential of MXene films as gate electrodes in wide-bandgap semiconductor devices.

Original languageEnglish (US)
Article number2211738
JournalAdvanced Materials
Issue number22
StatePublished - Jun 1 2023

Bibliographical note

Funding Information:
C.W. and X.X. contributed equally to this work. The research reported in this publication was funded by the King Abdullah University of Science and Technology.

Publisher Copyright:
© 2023 Wiley-VCH GmbH.


  • GaN HEMTs
  • near-ideal subthreshold swing
  • record high I /I ratio
  • Ti C T MXene
  • vdWs heterojunction

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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