TiO2 thin-film transistors fabricated by spray pyrolysis

Paul H. Wöbkenberg, Thilini Ishwara, Jenny Nelson, Donal D.C. Bradley, Saif A. Haque, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

52 Scopus citations


We demonstrate electron transporting thin-film transistors based on TiO2 films deposited from solution by spray pyrolysis under ambient atmosphere. The field-effect electron mobility is found to depend strongly on the device architecture and the type of source and drain electrodes employed. For optimized transistors a maximum mobility value of 0.05 cm2 /V s is obtained. Furthermore, the TiO2 transistors show air-stable operating characteristics with a shelf life time of several months. This is the only report on electron transporting transistors based on thin-films of TiO 2 deposited by spray pyrolysis. Such devices could be used for the study of charge carrier transport in TiO2 and other related materials.

Original languageEnglish (US)
Article number082116
JournalApplied Physics Letters
Issue number8
StatePublished - 2010
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2019-11-27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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