Abstract
We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 332-335 |
| Number of pages | 4 |
| Journal | physica status solidi (RRL) - Rapid Research Letters |
| Volume | 8 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jan 13 2014 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: This work was supported by the OCRF Competitive Research Grant (CRG-1-2012-HUS-008) and the Provost Award for Aftab M. Hussain.
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics