Time-Dependent Field Effect in Three-Dimensional Lead-Halide Perovskite Semiconductor Thin Films

Anil Reddy Pininti; James M. Ball; Munirah D. Albaqami; Annamaria Petrozza; Mario Caironi

doi:10.1021/acsaem.1c01558

Time-Dependent Field Effect in Three-Dimensional Lead-Halide Perovskite Semiconductor Thin Films

Anil Reddy Pininti, James M. Ball, Munirah D. Albaqami, Annamaria Petrozza^*, Mario Caironi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Charge transport in three-dimensional metal-halide perovskite semiconductors is due to a complex combination of ionic and electronic contributions, and its study is particularly relevant in light of their successful applications in photovoltaics as well as other opto- and microelectronic applications. Interestingly, the observation of field effect at room temperature in transistors based on solution-processed, polycrystalline, three-dimensional perovskite thin films has been elusive. In this work, we study the time-dependent electrical characteristics of field-effect transistors based on the model methylammonium lead iodide semiconductor and observe the drastic variations in output current, and therefore of apparent charge carrier mobility, as a function of the applied gate pulse duration. We infer this behavior to the accumulation of ions at the grain boundaries, which hamper the transport of carriers across the FET channel. This study reveals the dynamic nature of the field effect in solution-processed metal-halide perovskites and offers an investigation methodology useful to characterize charge carrier transport in such emerging semiconductors.

Original language	English (US)
Pages (from-to)	10603-10609
Number of pages	7
Journal	ACS Applied Energy Materials
Volume	4
Issue number	10
DOIs	https://doi.org/10.1021/acsaem.1c01558
State	Published - Oct 25 2021

Bibliographical note

Funding Information:
M.C. and A.R.P. acknowledge financial support from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme “HEROIC,” Grant Agreement 638059. This study was supported by the Distinguished Scientist Fellowship Program (DSFP) of King Saud University, Riyadh, Saudi Arabia.

Publisher Copyright:
© 2021 The Authors. Published by American Chemical Society.

Keywords

carrier mobility
charge transport
field-effect transistors
metal-halide perovskites
solution-processed semiconductors

ASJC Scopus subject areas

Chemical Engineering (miscellaneous)
Energy Engineering and Power Technology
Electrochemistry
Electrical and Electronic Engineering
Materials Chemistry

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10.1021/acsaem.1c01558

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title = "Time-Dependent Field Effect in Three-Dimensional Lead-Halide Perovskite Semiconductor Thin Films",

abstract = "Charge transport in three-dimensional metal-halide perovskite semiconductors is due to a complex combination of ionic and electronic contributions, and its study is particularly relevant in light of their successful applications in photovoltaics as well as other opto- and microelectronic applications. Interestingly, the observation of field effect at room temperature in transistors based on solution-processed, polycrystalline, three-dimensional perovskite thin films has been elusive. In this work, we study the time-dependent electrical characteristics of field-effect transistors based on the model methylammonium lead iodide semiconductor and observe the drastic variations in output current, and therefore of apparent charge carrier mobility, as a function of the applied gate pulse duration. We infer this behavior to the accumulation of ions at the grain boundaries, which hamper the transport of carriers across the FET channel. This study reveals the dynamic nature of the field effect in solution-processed metal-halide perovskites and offers an investigation methodology useful to characterize charge carrier transport in such emerging semiconductors.",

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AU - Caironi, Mario

N1 - Funding Information: M.C. and A.R.P. acknowledge financial support from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme “HEROIC,” Grant Agreement 638059. This study was supported by the Distinguished Scientist Fellowship Program (DSFP) of King Saud University, Riyadh, Saudi Arabia. Publisher Copyright: © 2021 The Authors. Published by American Chemical Society.

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N2 - Charge transport in three-dimensional metal-halide perovskite semiconductors is due to a complex combination of ionic and electronic contributions, and its study is particularly relevant in light of their successful applications in photovoltaics as well as other opto- and microelectronic applications. Interestingly, the observation of field effect at room temperature in transistors based on solution-processed, polycrystalline, three-dimensional perovskite thin films has been elusive. In this work, we study the time-dependent electrical characteristics of field-effect transistors based on the model methylammonium lead iodide semiconductor and observe the drastic variations in output current, and therefore of apparent charge carrier mobility, as a function of the applied gate pulse duration. We infer this behavior to the accumulation of ions at the grain boundaries, which hamper the transport of carriers across the FET channel. This study reveals the dynamic nature of the field effect in solution-processed metal-halide perovskites and offers an investigation methodology useful to characterize charge carrier transport in such emerging semiconductors.

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Time-Dependent Field Effect in Three-Dimensional Lead-Halide Perovskite Semiconductor Thin Films

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