Time-Dependent Field Effect in Three-Dimensional Lead-Halide Perovskite Semiconductor Thin Films

Anil Reddy Pininti, James M. Ball, Munirah D. Albaqami, Annamaria Petrozza*, Mario Caironi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Charge transport in three-dimensional metal-halide perovskite semiconductors is due to a complex combination of ionic and electronic contributions, and its study is particularly relevant in light of their successful applications in photovoltaics as well as other opto- and microelectronic applications. Interestingly, the observation of field effect at room temperature in transistors based on solution-processed, polycrystalline, three-dimensional perovskite thin films has been elusive. In this work, we study the time-dependent electrical characteristics of field-effect transistors based on the model methylammonium lead iodide semiconductor and observe the drastic variations in output current, and therefore of apparent charge carrier mobility, as a function of the applied gate pulse duration. We infer this behavior to the accumulation of ions at the grain boundaries, which hamper the transport of carriers across the FET channel. This study reveals the dynamic nature of the field effect in solution-processed metal-halide perovskites and offers an investigation methodology useful to characterize charge carrier transport in such emerging semiconductors.

Original languageEnglish (US)
Pages (from-to)10603-10609
Number of pages7
JournalACS Applied Energy Materials
Issue number10
StatePublished - Oct 25 2021

Bibliographical note

Funding Information:
M.C. and A.R.P. acknowledge financial support from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme “HEROIC,” Grant Agreement 638059. This study was supported by the Distinguished Scientist Fellowship Program (DSFP) of King Saud University, Riyadh, Saudi Arabia.

Publisher Copyright:
© 2021 The Authors. Published by American Chemical Society.


  • carrier mobility
  • charge transport
  • field-effect transistors
  • metal-halide perovskites
  • solution-processed semiconductors

ASJC Scopus subject areas

  • Chemical Engineering (miscellaneous)
  • Energy Engineering and Power Technology
  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Chemistry


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