Abstract
As a 2D material, MXene has emerged as an excellent electrode material for optoelectronic devices due to its high conductivity and hydrophilic surface. Here, the Ti3C2-based MXene was employed to construct the Ti3C2/-Ga2O3 Schottky junction photodetector. The fabricated device demonstrated a self-powered operation manner with an extremely low dark current (0.07 pA), an outstanding light on/off switch ratio (2.5106), a remarkable photo-response speed (43 ms/145 ms), a responsivity (R) of 15.5 mA/W, an external quantum efficiency (EQE) of 7.5% and a detectivity (D*) of 2.151011 Jones. Such excellent photodetection performance that is comparable or even higher than those of Ga2O3 Schottky photodetectors previously reported are originated from the excellent conductivity of MXene, good crystallization of -Ga2O3, and their well-matched energy level. Additionally, our Schottky junction device is capable of sensing solar-blind UV region and exhibits excellent stability in the air environment. The perfect combination of 2D MXene and wide-bandgap -Ga2O3 proposes a novel route for the self-powered Schottky devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1-1 |
| Number of pages | 1 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 28 |
| Issue number | 2: Optical Detectors |
| DOIs | |
| State | Published - Nov 4 2021 |
Bibliographical note
KAUST Repository Item: Exported on 2022-12-13Acknowledgements: This work was supported by the National Natural Science Foundation of China under Grants 61774019, the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), and the Fundamental Research Funds for the Central Universities, China.