THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

Guibao Xu; Yujie J. Ding; Hongping Zhao; Guangyu Liu; Muhammad Jamil; Nelson Tansu; Ioulia B. Zotova; Charles E. Stutz; Darnell E. Diggs; Nils Fernelius; F. Ken Hopkins; Chad S. Gallinat; Gregor Koblmüller; James S. Speck

doi:10.1088/0268-1242/25/1/015004

THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

Guibao Xu, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Muhammad Jamil, Nelson Tansu, Ioulia B. Zotova, Charles E. Stutz, Darnell E. Diggs, Nils Fernelius, F. Ken Hopkins, Chad S. Gallinat, Gregor Koblmüller, James S. Speck

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26 Scopus citations

Abstract

We have investigated the characteristics of THz generation including the dependence of the output power and polarization on the incident angle and pump polarization from two series of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal organic chemical vapor deposition (MOCVD), respectively. Following the analyses of our results, we have attributed the mechanism of the THz generation from these InN samples to the destructive interference between optical rectification and photocurrent surge. Under the average intensity of 176 W cm^-2 for the subpicosecond laser pulses at 782 nm, the THz output powers were measured to be as high as 2.4 μW from the 220 nm InN film, with the output frequencies spanning the band from 300 GHz to 2.5 THz.

Original language	English (US)
Article number	015004
Journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume	25
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/25/1/015004
State	Published - 2010
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Xu, G., Ding, Y. J., Zhao, H., Liu, G., Jamil, M., Tansu, N., Zotova, I. B., Stutz, C. E., Diggs, D. E., Fernelius, N., Hopkins, F. K., Gallinat, C. S., Koblmüller, G., & Speck, J. S. (2010). THz generation from InN films due to destructive interference between optical rectification and photocurrent surge. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25(1), Article 015004. https://doi.org/10.1088/0268-1242/25/1/015004

@article{afafa1065aca4a49aeeb0b1ccb4af836,

title = "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge",

abstract = "We have investigated the characteristics of THz generation including the dependence of the output power and polarization on the incident angle and pump polarization from two series of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal organic chemical vapor deposition (MOCVD), respectively. Following the analyses of our results, we have attributed the mechanism of the THz generation from these InN samples to the destructive interference between optical rectification and photocurrent surge. Under the average intensity of 176 W cm-2 for the subpicosecond laser pulses at 782 nm, the THz output powers were measured to be as high as 2.4 μW from the 220 nm InN film, with the output frequencies spanning the band from 300 GHz to 2.5 THz.",

author = "Guibao Xu and Ding, {Yujie J.} and Hongping Zhao and Guangyu Liu and Muhammad Jamil and Nelson Tansu and Zotova, {Ioulia B.} and Stutz, {Charles E.} and Diggs, {Darnell E.} and Nils Fernelius and Hopkins, {F. Ken} and Gallinat, {Chad S.} and Gregor Koblm{\"u}ller and Speck, {James S.}",

year = "2010",

doi = "10.1088/0268-1242/25/1/015004",

language = "English (US)",

volume = "25",

journal = "SEMICONDUCTOR SCIENCE AND TECHNOLOGY",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "1",

}

Xu, G, Ding, YJ, Zhao, H, Liu, G, Jamil, M, Tansu, N, Zotova, IB, Stutz, CE, Diggs, DE, Fernelius, N, Hopkins, FK, Gallinat, CS, Koblmüller, G & Speck, JS 2010, 'THz generation from InN films due to destructive interference between optical rectification and photocurrent surge', SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 25, no. 1, 015004. https://doi.org/10.1088/0268-1242/25/1/015004

TY - JOUR

T1 - THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

AU - Xu, Guibao

AU - Ding, Yujie J.

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Jamil, Muhammad

AU - Tansu, Nelson

AU - Zotova, Ioulia B.

AU - Stutz, Charles E.

AU - Diggs, Darnell E.

AU - Fernelius, Nils

AU - Hopkins, F. Ken

AU - Gallinat, Chad S.

AU - Koblmüller, Gregor

AU - Speck, James S.

PY - 2010

Y1 - 2010

N2 - We have investigated the characteristics of THz generation including the dependence of the output power and polarization on the incident angle and pump polarization from two series of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal organic chemical vapor deposition (MOCVD), respectively. Following the analyses of our results, we have attributed the mechanism of the THz generation from these InN samples to the destructive interference between optical rectification and photocurrent surge. Under the average intensity of 176 W cm-2 for the subpicosecond laser pulses at 782 nm, the THz output powers were measured to be as high as 2.4 μW from the 220 nm InN film, with the output frequencies spanning the band from 300 GHz to 2.5 THz.

AB - We have investigated the characteristics of THz generation including the dependence of the output power and polarization on the incident angle and pump polarization from two series of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal organic chemical vapor deposition (MOCVD), respectively. Following the analyses of our results, we have attributed the mechanism of the THz generation from these InN samples to the destructive interference between optical rectification and photocurrent surge. Under the average intensity of 176 W cm-2 for the subpicosecond laser pulses at 782 nm, the THz output powers were measured to be as high as 2.4 μW from the 220 nm InN film, with the output frequencies spanning the band from 300 GHz to 2.5 THz.

UR - http://www.scopus.com/inward/record.url?scp=75649134548&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/25/1/015004

DO - 10.1088/0268-1242/25/1/015004

M3 - Article

AN - SCOPUS:75649134548

SN - 0268-1242

VL - 25

JO - SEMICONDUCTOR SCIENCE AND TECHNOLOGY

JF - SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IS - 1

M1 - 015004

ER -

THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

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