THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates

Kwangwook Park; Jung-Wook Min; Ram Subedi; Mohammad Khaled Shakfa; Bambar Davaasuren; Tien Khee Ng; Boon S. Ooi; Chul Kang; Jongmin Kim

doi:10.1016/j.apsusc.2020.146422

THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates

Kwangwook Park, Jung-Wook Min, Ram Subedi, Mohammad Khaled Shakfa, Bambar Davaasuren, Tien Khee Ng, Boon S. Ooi, Chul Kang, Jongmin Kim

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Abstract

We investigate the coalescent GaN nanorods grown on Si (100) and Si (111) substrates. Our results clearly show that GaN nanorods grown on both substrates have the same structural, optical and morphological properties. However, we observed a clear difference in terahertz (THz) radiation between the two sets of GaN nanorods. With high gallium molecular beam flux around 6 × 10−7 Torr, coalescent GaN nanorods grown on Si (111) substrates exhibit observable THz radiation, while the ones grown on Si (100) substrates do not. The inactive THz behavior of the GaN nanorods grown on Si (100) substrate is due to the presence of randomly-rotated GaN nanorods during coalescence. The dissimilarity in THz radiation behavior between the two GaN nanorods, i.e. interfering incident optical pulse thus exhibiting inactive THz radiation from GaN nanorods grown on (100) substrate indicate that the nanorods are attractive for further THz applications not limited to III-N materials system but also other materials systems.

Original language	English (US)
Pages (from-to)	146422
Journal	Applied Surface Science
Volume	522
DOIs	https://doi.org/10.1016/j.apsusc.2020.146422
State	Published - Apr 25 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: KP thanks Prof. Ji-Sang Park of Kyungpook National University, Republic of Korea and Dr. Kirstin Alberi of National Renewable Energy Laboratory (NREL), United States of America for their useful discussions. CK acknowledge that this work was supported by the Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) grant funded by the GIST in 2020 and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No. 2019R1F1A1063156). BSO, TKN, JWM, MKS and RS acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding No. BAS/1/1614-01-01.

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10.1016/j.apsusc.2020.146422

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@article{793d37332f904922a87e80857c63410b,

title = "THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates",

abstract = "We investigate the coalescent GaN nanorods grown on Si (100) and Si (111) substrates. Our results clearly show that GaN nanorods grown on both substrates have the same structural, optical and morphological properties. However, we observed a clear difference in terahertz (THz) radiation between the two sets of GaN nanorods. With high gallium molecular beam flux around 6 × 10−7 Torr, coalescent GaN nanorods grown on Si (111) substrates exhibit observable THz radiation, while the ones grown on Si (100) substrates do not. The inactive THz behavior of the GaN nanorods grown on Si (100) substrate is due to the presence of randomly-rotated GaN nanorods during coalescence. The dissimilarity in THz radiation behavior between the two GaN nanorods, i.e. interfering incident optical pulse thus exhibiting inactive THz radiation from GaN nanorods grown on (100) substrate indicate that the nanorods are attractive for further THz applications not limited to III-N materials system but also other materials systems.",

author = "Kwangwook Park and Jung-Wook Min and Ram Subedi and Shakfa, {Mohammad Khaled} and Bambar Davaasuren and Ng, {Tien Khee} and Ooi, {Boon S.} and Chul Kang and Jongmin Kim",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: KP thanks Prof. Ji-Sang Park of Kyungpook National University, Republic of Korea and Dr. Kirstin Alberi of National Renewable Energy Laboratory (NREL), United States of America for their useful discussions. CK acknowledge that this work was supported by the Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) grant funded by the GIST in 2020 and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No. 2019R1F1A1063156). BSO, TKN, JWM, MKS and RS acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding No. BAS/1/1614-01-01.",

year = "2020",

month = apr,

day = "25",

doi = "10.1016/j.apsusc.2020.146422",

language = "English (US)",

volume = "522",

pages = "146422",

journal = "Applied Surface Science",

issn = "0169-4332",

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TY - JOUR

T1 - THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates

AU - Park, Kwangwook

AU - Min, Jung-Wook

AU - Subedi, Ram

AU - Shakfa, Mohammad Khaled

AU - Davaasuren, Bambar

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Kang, Chul

AU - Kim, Jongmin

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: KP thanks Prof. Ji-Sang Park of Kyungpook National University, Republic of Korea and Dr. Kirstin Alberi of National Renewable Energy Laboratory (NREL), United States of America for their useful discussions. CK acknowledge that this work was supported by the Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) grant funded by the GIST in 2020 and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No. 2019R1F1A1063156). BSO, TKN, JWM, MKS and RS acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding No. BAS/1/1614-01-01.

PY - 2020/4/25

Y1 - 2020/4/25

N2 - We investigate the coalescent GaN nanorods grown on Si (100) and Si (111) substrates. Our results clearly show that GaN nanorods grown on both substrates have the same structural, optical and morphological properties. However, we observed a clear difference in terahertz (THz) radiation between the two sets of GaN nanorods. With high gallium molecular beam flux around 6 × 10−7 Torr, coalescent GaN nanorods grown on Si (111) substrates exhibit observable THz radiation, while the ones grown on Si (100) substrates do not. The inactive THz behavior of the GaN nanorods grown on Si (100) substrate is due to the presence of randomly-rotated GaN nanorods during coalescence. The dissimilarity in THz radiation behavior between the two GaN nanorods, i.e. interfering incident optical pulse thus exhibiting inactive THz radiation from GaN nanorods grown on (100) substrate indicate that the nanorods are attractive for further THz applications not limited to III-N materials system but also other materials systems.

AB - We investigate the coalescent GaN nanorods grown on Si (100) and Si (111) substrates. Our results clearly show that GaN nanorods grown on both substrates have the same structural, optical and morphological properties. However, we observed a clear difference in terahertz (THz) radiation between the two sets of GaN nanorods. With high gallium molecular beam flux around 6 × 10−7 Torr, coalescent GaN nanorods grown on Si (111) substrates exhibit observable THz radiation, while the ones grown on Si (100) substrates do not. The inactive THz behavior of the GaN nanorods grown on Si (100) substrate is due to the presence of randomly-rotated GaN nanorods during coalescence. The dissimilarity in THz radiation behavior between the two GaN nanorods, i.e. interfering incident optical pulse thus exhibiting inactive THz radiation from GaN nanorods grown on (100) substrate indicate that the nanorods are attractive for further THz applications not limited to III-N materials system but also other materials systems.

UR - http://hdl.handle.net/10754/662704

UR - https://linkinghub.elsevier.com/retrieve/pii/S016943322031179X

UR - http://www.scopus.com/inward/record.url?scp=85084074143&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2020.146422

DO - 10.1016/j.apsusc.2020.146422

M3 - Article

SN - 0169-4332

VL - 522

SP - 146422

JO - Applied Surface Science

JF - Applied Surface Science

ER -

THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates

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