Thresholds of quasi-supercontinuum interband quantum dot lasers

C. L. Tan; Y. Wang; H. S. Djie; B. S. Ooi

doi:10.1007/s11082-009-9277-2

Thresholds of quasi-supercontinuum interband quantum dot lasers

C. L. Tan, Y. Wang, H. S. Djie, B. S. Ooi

Research output: Contribution to journal › Article › peer-review

Abstract

We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.

Original language	English (US)
Pages (from-to)	1227-1231
Number of pages	5
Journal	Optical and Quantum Electronics
Volume	40
Issue number	14-15 SPEC. ISS.
DOIs	https://doi.org/10.1007/s11082-009-9277-2
State	Published - Nov 2008
Externally published	Yes

Keywords

Broadband
Inhomogeneous broadening
Quantum-dot
Semiconductor laser
Superscontinuum

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1007/s11082-009-9277-2

Cite this

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title = "Thresholds of quasi-supercontinuum interband quantum dot lasers",

abstract = "We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.",

keywords = "Broadband, Inhomogeneous broadening, Quantum-dot, Semiconductor laser, Superscontinuum",

author = "Tan, {C. L.} and Y. Wang and Djie, {H. S.} and Ooi, {B. S.}",

year = "2008",

month = nov,

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AU - Tan, C. L.

AU - Wang, Y.

AU - Djie, H. S.

AU - Ooi, B. S.

PY - 2008/11

Y1 - 2008/11

N2 - We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.

AB - We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.

KW - Broadband

KW - Inhomogeneous broadening

KW - Quantum-dot

KW - Semiconductor laser

KW - Superscontinuum

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U2 - 10.1007/s11082-009-9277-2

DO - 10.1007/s11082-009-9277-2

M3 - Article

AN - SCOPUS:69949093483

SN - 0306-8919

VL - 40

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EP - 1231

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 14-15 SPEC. ISS.

ER -

Thresholds of quasi-supercontinuum interband quantum dot lasers

Abstract

Keywords

ASJC Scopus subject areas

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