Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

T. Sugiyama; D. Iida; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1002/pssc.200983595

Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

T. Sugiyama, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

18 Scopus citations

Abstract

The threshold voltage (Vth) of normally off-mode Al-GaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equivalent circuit model. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English (US)
Title of host publication	Physica Status Solidi (C) Current Topics in Solid State Physics
Pages	1980-1982
Number of pages	3
DOIs	https://doi.org/10.1002/pssc.200983595
State	Published - Aug 26 2010
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200983595

Cite this

@inproceedings{cbb4a431286b4d779ea90dc35b9b1c51,

title = "Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate",

abstract = "The threshold voltage (Vth) of normally off-mode Al-GaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equivalent circuit model. {\textcopyright} 2010 Wiley-VCH Verlag GmbH & Co. KGaA.",

author = "T. Sugiyama and D. Iida and M. Iwaya and S. Kamiyama and H. Amano and I. Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2010",

month = aug,

day = "26",

doi = "10.1002/pssc.200983595",

language = "English (US)",

pages = "1980--1982",

booktitle = "Physica Status Solidi (C) Current Topics in Solid State Physics",

}

TY - GEN

T1 - Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

AU - Sugiyama, T.

AU - Iida, D.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2010/8/26

Y1 - 2010/8/26

N2 - The threshold voltage (Vth) of normally off-mode Al-GaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equivalent circuit model. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - The threshold voltage (Vth) of normally off-mode Al-GaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equivalent circuit model. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200983595

UR - http://www.scopus.com/inward/record.url?scp=77955798064&partnerID=8YFLogxK

U2 - 10.1002/pssc.200983595

DO - 10.1002/pssc.200983595

M3 - Conference contribution

SP - 1980

EP - 1982

BT - Physica Status Solidi (C) Current Topics in Solid State Physics

ER -

Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this