Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures

Wei Guo, Somak Mitra, Jie’an Jiang, Houqiang Xu, Moheb Sheikhi, Haiding Sun, Kangkai Tian, Zi-hui Zhang, Haibo Jiang, Iman S. Roqan, Xiaohang Li, Jichun Ye

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


The 2D band diagram comprising out-of-plane potentials has been ubiquitously utilized for III-nitride heterostructures. Here, we propose the 3D band diagram based on unambiguous evidences in luminescence and carrier dynamics for lateral polarity junction quantum wells: although electrons and holes are separated out-of-plane in quantum wells by polarization, different band diagram heights lead to secondary carrier injection in-plane, causing electrons to transport from the III- to N-polar domains to recombine with holes therein with large wavefunction overlap. We also show that utilization of the 3D band diagram can be extended to single-polarity structures to analyze carrier transport and dynamics, providing new dimensions for accurate optical device design.
Original languageEnglish (US)
Pages (from-to)1058
Issue number8
StatePublished - Aug 13 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, URF/ 1/3437-01-01, URF/1/3771-01-01, REP/1/3189-01-01
Acknowledgements: National Key Research and Development Program of China (2016YFB0400802); National Natural Science Foundation of China (NSFC) (61574145, 61704176); Natural Science Foundation of Zhejiang Province (LY15F040003); KAUST Baseline (BAS/1/1664-01-01); KAUST CRG (URF/ 1/3437-01-01, URF/1/3771-01-01); KAUST GCC (REP/1/3189-01-01).


Dive into the research topics of 'Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures'. Together they form a unique fingerprint.

Cite this