Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

Engineering

• Nonvolatile Memory 100%
• Random Access Memory 100%
• Bending Radius 33%
• Aspect Ratio 33%
• Electric Field 33%
• Proportionality 33%
• Feature Size 33%
• Organic Electronics 33%
• Zirconium Titanate 33%
• Nanoscale 33%
• Memory Array 33%

Material Science

• Capacitor 100%
• Ferroelectric Material 100%
• Transistor 33%
• Organic Electronics 16%
• Sol Gel Coating 16%
• Density 16%
• Zirconium Titanate 16%

Keyphrases

• CMOS Electronics 33%
• Access Transistor 33%
• Depth Aspect 33%
• Inverse Proportionality 33%
• Sol-gel Coating 33%
• Memory Parameter 33%
• Flexible Forming 33%
• Coercive Electric Field 33%
• Substrate Thickness 33%