Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

Material Science

• Complementary Metal-Oxide-Semiconductor Device 100%
• Thin-Film Transistor 100%
• Thin Films 100%
• Device Fabrication 50%
• Dielectric Material 50%
• Inverter 50%
• Tin Oxide 50%
• Oxide Compound 50%

Keyphrases

• Channel Layer 100%
• One-step Deposition 100%
• Fabrication Temperature 50%
• Oxide Thin-film Transistors 50%
• Transparent Conducting Oxide 50%
• Tin Oxide 50%
• Hydroxyl Group 50%