Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

Pradipta K. Nayak, Jesus Alfonso Caraveo-Frescas, Zhenwei Wang, Mohamed N. Hedhili, Qingxiao Wang, Husam N. Alshareef

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97 Scopus citations


We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.
Original languageEnglish (US)
JournalScientific Reports
Issue number1
StatePublished - Apr 14 2014

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