Thermopower and optical studies on undoped and manganese doped indium tin oxide films

S. R.Sarath Kumar; V. Damodara Das; S. Kasiviswanathan

doi:10.1016/j.tsf.2009.09.094

Thermopower and optical studies on undoped and manganese doped indium tin oxide films

S. R.Sarath Kumar, V. Damodara Das, S. Kasiviswanathan^*

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Thermopower measurements in the range of 300-650 K along with room temperature optical absorption and electrical resistivity studies have been performed on indium tin oxide (ITO) and manganese doped indium tin oxide (Mn:ITO) thin films grown by reactive DC sputtering. The thermopower of the films measured in Ar ambient displayed irreversible changes attributable to oxygen loss. Thermopower, carrier concentration and resistivity of the films have been found to depend on oxygen vacancies and Mn concentration. The observations have been substantiated with optical absorption and room temperature electrical resistivity results. It has also been observed that band gap tuning in these films is possible by the introduction of Mn as well as oxygen vacancies.

Original language	English (US)
Pages (from-to)	1390-1393
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	5
DOIs	https://doi.org/10.1016/j.tsf.2009.09.094
State	Published - Dec 31 2009

Bibliographical note

Funding Information:
One of the authors, S.R. Sarath Kumar wishes to thank the financial support provided by the Council for Scientific and Industrial Research (CSIR), India in the form of a senior research fellowship.

Keywords

Diluted magnetic semiconductors
Thermopower
Transparent conducting oxides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.09.094

Cite this

@article{fe97181fad7a4fda86abb86df90b9767,

title = "Thermopower and optical studies on undoped and manganese doped indium tin oxide films",

abstract = "Thermopower measurements in the range of 300-650 K along with room temperature optical absorption and electrical resistivity studies have been performed on indium tin oxide (ITO) and manganese doped indium tin oxide (Mn:ITO) thin films grown by reactive DC sputtering. The thermopower of the films measured in Ar ambient displayed irreversible changes attributable to oxygen loss. Thermopower, carrier concentration and resistivity of the films have been found to depend on oxygen vacancies and Mn concentration. The observations have been substantiated with optical absorption and room temperature electrical resistivity results. It has also been observed that band gap tuning in these films is possible by the introduction of Mn as well as oxygen vacancies.",

keywords = "Diluted magnetic semiconductors, Thermopower, Transparent conducting oxides",

author = "Kumar, {S. R.Sarath} and Das, {V. Damodara} and S. Kasiviswanathan",

note = "Funding Information: One of the authors, S.R. Sarath Kumar wishes to thank the financial support provided by the Council for Scientific and Industrial Research (CSIR), India in the form of a senior research fellowship.",

year = "2009",

month = dec,

day = "31",

doi = "10.1016/j.tsf.2009.09.094",

language = "English (US)",

volume = "518",

pages = "1390--1393",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "5",

}

TY - JOUR

T1 - Thermopower and optical studies on undoped and manganese doped indium tin oxide films

AU - Kumar, S. R.Sarath

AU - Das, V. Damodara

AU - Kasiviswanathan, S.

N1 - Funding Information: One of the authors, S.R. Sarath Kumar wishes to thank the financial support provided by the Council for Scientific and Industrial Research (CSIR), India in the form of a senior research fellowship.

PY - 2009/12/31

Y1 - 2009/12/31

N2 - Thermopower measurements in the range of 300-650 K along with room temperature optical absorption and electrical resistivity studies have been performed on indium tin oxide (ITO) and manganese doped indium tin oxide (Mn:ITO) thin films grown by reactive DC sputtering. The thermopower of the films measured in Ar ambient displayed irreversible changes attributable to oxygen loss. Thermopower, carrier concentration and resistivity of the films have been found to depend on oxygen vacancies and Mn concentration. The observations have been substantiated with optical absorption and room temperature electrical resistivity results. It has also been observed that band gap tuning in these films is possible by the introduction of Mn as well as oxygen vacancies.

AB - Thermopower measurements in the range of 300-650 K along with room temperature optical absorption and electrical resistivity studies have been performed on indium tin oxide (ITO) and manganese doped indium tin oxide (Mn:ITO) thin films grown by reactive DC sputtering. The thermopower of the films measured in Ar ambient displayed irreversible changes attributable to oxygen loss. Thermopower, carrier concentration and resistivity of the films have been found to depend on oxygen vacancies and Mn concentration. The observations have been substantiated with optical absorption and room temperature electrical resistivity results. It has also been observed that band gap tuning in these films is possible by the introduction of Mn as well as oxygen vacancies.

KW - Diluted magnetic semiconductors

KW - Thermopower

KW - Transparent conducting oxides

UR - http://www.scopus.com/inward/record.url?scp=70449491182&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.09.094

DO - 10.1016/j.tsf.2009.09.094

M3 - Article

AN - SCOPUS:70449491182

SN - 0040-6090

VL - 518

SP - 1390

EP - 1393

JO - Thin Solid Films

JF - Thin Solid Films

IS - 5

ER -

Thermopower and optical studies on undoped and manganese doped indium tin oxide films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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