Thermoelectric Properties of the XCoSb (X: Ti,Zr,Hf) Half-Heusler Alloys

Appala Gandi, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We investigate the thermoelectric properties of the half-Heusler alloys XCoSb (X: Ti,Zr,Hf) by solving Boltzmann transport equations and discuss them in terms of the electronic band structure. The rigid band approximation is employed to address the effects of doping. While many half-Heuser alloys show excellent thermoelectric performance, the materials under study are special by supporting both n- and p-doping. We identify the reasons for this balanced thermoelectric transport and explain why experimentally p-doping is superior to n-doping. We also determine the spectrum of phonon mean free paths to guide grain refinement methods to enhance the thermoelectric figure of merit.
Original languageEnglish (US)
Pages (from-to)1700419
Journalphysica status solidi (b)
Volume254
Issue number11
DOIs
StatePublished - Sep 15 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST.

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