Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions

Jing Zhang*, Hua Tong, Guangyu Liu, Juan A. Herbsommer, G. S. Huang, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Thermoelectric properties of AlInN alloys, grown by metalorganic vapor phase epitaxy (MOVPE), with In-contents (x) from 11 % up to 21.34% were characterized and analyzed at room temperature. The thermoelectric figure of merit (Z*T) values of the n-Al1-xInxN alloys were measured as high as 0.391 up to 0.532 at T = 300 K. The use of high In-content (x = 21.34%) AlInN alloys leads to significant reduction in thermal conductivity [κ = 1.62 W/(mK)] due to the increased alloy scattering, however, the optimized thermoelectric material was obtained for AlInN alloy with In-content of 17% attributed to its large power factor.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices VI
StatePublished - May 13 2011
EventGallium Nitride Materials and Devices VI - San Francisco, CA, United States
Duration: Jan 24 2011Jan 27 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherGallium Nitride Materials and Devices VI
Country/TerritoryUnited States
CitySan Francisco, CA


  • AlInN
  • Seebeck Coefficient
  • Thermoelectric

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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